TY - JOUR
T1 - Novel method of separating macroporous arrays from p-type silicon substrate
AU - Peng, Bobo
AU - Wang, Fei
AU - Liu, Tao
AU - Yang, Zhenya
AU - Wang, Lianwei
AU - Fu, Ricky K. Y.
AU - Chu, Paul K.
PY - 2012/4
Y1 - 2012/4
N2 - This paper presents a novel method to fabricate separated macroporous silicon using a single step of photo-assisted electrochemical etching. The method is applied to fabricate silicon microchannel plates in 100 mm p-type silicon wafers, which can be used as electron multipliers and three-dimensional Li-ion microbatteries. Increasing the backside illumination intensity and decreasing the bias simultaneously can generate additional holes during the electrochemical etching which will create lateral etching at the pore tips. In this way the silicon microchannel can be separated from the substrate when the desired depth is reached, then it can be cut into the desired shape by using a laser cutting machine. Also, the mechanism of lateral etching is proposed. © 2012 Chinese Institute of Electronics.
AB - This paper presents a novel method to fabricate separated macroporous silicon using a single step of photo-assisted electrochemical etching. The method is applied to fabricate silicon microchannel plates in 100 mm p-type silicon wafers, which can be used as electron multipliers and three-dimensional Li-ion microbatteries. Increasing the backside illumination intensity and decreasing the bias simultaneously can generate additional holes during the electrochemical etching which will create lateral etching at the pore tips. In this way the silicon microchannel can be separated from the substrate when the desired depth is reached, then it can be cut into the desired shape by using a laser cutting machine. Also, the mechanism of lateral etching is proposed. © 2012 Chinese Institute of Electronics.
KW - electrochemical etching
KW - macroporous silicon
KW - MCP
KW - p-type silicon
KW - separation
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UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-84860552439&origin=recordpage
U2 - 10.1088/1674-4926/33/4/043004
DO - 10.1088/1674-4926/33/4/043004
M3 - RGC 21 - Publication in refereed journal
SN - 1674-4926
VL - 33
JO - Journal of Semiconductors
JF - Journal of Semiconductors
IS - 4
M1 - 43004
ER -