Novel low-field magnetoresistive devices based on manganites

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalNot applicablepeer-review

2 Scopus Citations
View graph of relations

Author(s)

  • F. Miletto Granozio
  • A. Oropallo
  • G. P. Pepe
  • P. Perna
  • U. Scotti di Uccio
  • D. Pullini
  • G. Innocenti
  • P. Perlo

Detail(s)

Original languageEnglish
Journal / PublicationJournal of Magnetism and Magnetic Materials
Volume310
Issue number2 SUPPL. PART 3
Publication statusPublished - Mar 2007
Externally publishedYes

Abstract

We present novel low-field magnetoresistive devices based on the ferromagnetic manganite La0.7Sr0.3MnO3 operating in the current in plane (CIP) configuration. In these planar spin-valve devices, a focused Ga+ beam is used to create pinning centers for magnetic domain walls. The spin-dependent scattering of polarized electrons at the domain walls (DW) is responsible for the magnetoresistance observed in the patterned tracks. The magneto-transport properties of these devices are interpreted within a model for DW magnetoresistance. Applications such as magnetic data storage can be envisaged for the structures we investigated. © 2006 Elsevier B.V. All rights reserved.

Research Area(s)

  • Magnetic devices, Nanoscale contacts, Spin polarized transport

Citation Format(s)

Novel low-field magnetoresistive devices based on manganites. / Ruotolo, A.; Miletto Granozio, F.; Oropallo, A.; Pepe, G. P.; Perna, P.; Scotti di Uccio, U.; Pullini, D.; Innocenti, G.; Perlo, P.

In: Journal of Magnetism and Magnetic Materials, Vol. 310, No. 2 SUPPL. PART 3, 03.2007.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalNot applicablepeer-review