Novel low-field magnetoresistive devices based on manganites

A. Ruotolo; F. Miletto Granozio; A. Oropallo; G. P. Pepe; P. Perna; U. Scotti di Uccio; D. Pullini; G. Innocenti; P. Perlo

doi:10.1016/j.jmmm.2006.10.689

Novel low-field magnetoresistive devices based on manganites

A. Ruotolo, F. Miletto Granozio, A. Oropallo, G. P. Pepe, P. Perna, U. Scotti di Uccio, D. Pullini, G. Innocenti, P. Perlo

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

2 Citations (Scopus)

Abstract

We present novel low-field magnetoresistive devices based on the ferromagnetic manganite La_0.7Sr_0.3MnO₃ operating in the current in plane (CIP) configuration. In these planar spin-valve devices, a focused Ga⁺ beam is used to create pinning centers for magnetic domain walls. The spin-dependent scattering of polarized electrons at the domain walls (DW) is responsible for the magnetoresistance observed in the patterned tracks. The magneto-transport properties of these devices are interpreted within a model for DW magnetoresistance. Applications such as magnetic data storage can be envisaged for the structures we investigated. © 2006 Elsevier B.V. All rights reserved.

Original language	English
Journal	Journal of Magnetism and Magnetic Materials
Volume	310
Issue number	2 SUPPL. PART 3
DOIs	https://doi.org/10.1016/j.jmmm.2006.10.689
Publication status	Published - Mar 2007
Externally published	Yes

Research Keywords

Magnetic devices
Nanoscale contacts
Spin polarized transport

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10.1016/j.jmmm.2006.10.689

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@article{8b76f0170160462699e61c3f8719a453,

title = "Novel low-field magnetoresistive devices based on manganites",

abstract = "We present novel low-field magnetoresistive devices based on the ferromagnetic manganite La0.7Sr0.3MnO3 operating in the current in plane (CIP) configuration. In these planar spin-valve devices, a focused Ga+ beam is used to create pinning centers for magnetic domain walls. The spin-dependent scattering of polarized electrons at the domain walls (DW) is responsible for the magnetoresistance observed in the patterned tracks. The magneto-transport properties of these devices are interpreted within a model for DW magnetoresistance. Applications such as magnetic data storage can be envisaged for the structures we investigated. {\textcopyright} 2006 Elsevier B.V. All rights reserved.",

keywords = "Magnetic devices, Nanoscale contacts, Spin polarized transport",

author = "A. Ruotolo and {Miletto Granozio}, F. and A. Oropallo and Pepe, {G. P.} and P. Perna and {Scotti di Uccio}, U. and D. Pullini and G. Innocenti and P. Perlo",

year = "2007",

month = mar,

doi = "10.1016/j.jmmm.2006.10.689",

language = "English",

volume = "310",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

publisher = "Elsevier B.V.",

number = "2 SUPPL. PART 3",

}

TY - JOUR

T1 - Novel low-field magnetoresistive devices based on manganites

AU - Ruotolo, A.

AU - Miletto Granozio, F.

AU - Oropallo, A.

AU - Pepe, G. P.

AU - Perna, P.

AU - Scotti di Uccio, U.

AU - Pullini, D.

AU - Innocenti, G.

AU - Perlo, P.

PY - 2007/3

Y1 - 2007/3

N2 - We present novel low-field magnetoresistive devices based on the ferromagnetic manganite La0.7Sr0.3MnO3 operating in the current in plane (CIP) configuration. In these planar spin-valve devices, a focused Ga+ beam is used to create pinning centers for magnetic domain walls. The spin-dependent scattering of polarized electrons at the domain walls (DW) is responsible for the magnetoresistance observed in the patterned tracks. The magneto-transport properties of these devices are interpreted within a model for DW magnetoresistance. Applications such as magnetic data storage can be envisaged for the structures we investigated. © 2006 Elsevier B.V. All rights reserved.

AB - We present novel low-field magnetoresistive devices based on the ferromagnetic manganite La0.7Sr0.3MnO3 operating in the current in plane (CIP) configuration. In these planar spin-valve devices, a focused Ga+ beam is used to create pinning centers for magnetic domain walls. The spin-dependent scattering of polarized electrons at the domain walls (DW) is responsible for the magnetoresistance observed in the patterned tracks. The magneto-transport properties of these devices are interpreted within a model for DW magnetoresistance. Applications such as magnetic data storage can be envisaged for the structures we investigated. © 2006 Elsevier B.V. All rights reserved.

KW - Magnetic devices

KW - Nanoscale contacts

KW - Spin polarized transport

UR - http://www.scopus.com/inward/record.url?scp=33847673973&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-33847673973&origin=recordpage

U2 - 10.1016/j.jmmm.2006.10.689

DO - 10.1016/j.jmmm.2006.10.689

M3 - RGC 21 - Publication in refereed journal

SN - 0304-8853

VL - 310

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - 2 SUPPL. PART 3

ER -

Novel low-field magnetoresistive devices based on manganites

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