@inproceedings{1242c1855a4748b5a938fcf4c8b30267,
title = "Novel etch-diffusion process for fabricating high aspect ratio Si microstructures",
abstract = "A novel etch-diffusion process is developed for fabricating high aspect ratio Si structures for microsensors. This is accomplished by first dry etching narrow gap Si microstructures using an electron cyclotron resonance (ECR) source, followed by a shallow B diffusion to fully convert the etched microstructures to p++ layer. Microstructures up to 40 μm deep with 2 μm wide gap were etched with a Cl2 plasma generated using the ECR source. Vertical profile and smooth morphology were obtained at low pressure. This is the first demonstration of released high aspect ratio Si microstructures with thicknesses ≥20 μm.",
author = "Juan, \{W. H.\} and Pang, \{S. W.\}",
year = "1995",
language = "English",
volume = "1",
publisher = "IEEE",
pages = "560--563",
booktitle = "International Conference on Solid-State Sensors and Actuators, and Eurosensors IX, Proceedings",
address = "United States",
note = "Proceedings of the 1995 8th International Conference on Solid-State Sensors and Actuators and Eurosensors IX. Part 1 (of 2) ; Conference date: 25-06-1995 Through 29-06-1995",
}