Novel dopant activation of heavily doped p+-Si by high current densities

J. S. Huang; K. N. Tu

doi:10.1103/PhysRevLett.77.4926

Novel dopant activation of heavily doped p⁺-Si by high current densities

J. S. Huang, K. N. Tu

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

2 Citations (Scopus)

Abstract

Novel dopant activation in the heavily boron-doped p⁺-Si was created by applying an electrical current of high current density. The p⁺-Si was implanted by 40 keV BF⁺₂ of 5 Ö 10¹⁵ions /cm² and annealed at 900 °C for 30 min to obtain a partial boron activation. For additional activation, we gradually applied current until a current density of 5 Ö 10⁶A/cm² was achieved. The resistance of the p⁺-Si responded by gradually increasing, then decreasing with a precipitous drop. The resistance was reduced by a factor of 5 to 18. Mechanisms of the novel dopant activation are proposed. © 1996 The American Physical Society.

Original language	English
Pages (from-to)	4926-4929
Journal	Physical Review Letters
Volume	77
Issue number	24
DOIs	https://doi.org/10.1103/PhysRevLett.77.4926
Publication status	Published - 9 Dec 1996
Externally published	Yes

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Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

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title = "Novel dopant activation of heavily doped p+-Si by high current densities",

abstract = "Novel dopant activation in the heavily boron-doped p+-Si was created by applying an electrical current of high current density. The p+-Si was implanted by 40 keV BF+2 of 5 {\"O} 1015 ions /cm2 and annealed at 900 °C for 30 min to obtain a partial boron activation. For additional activation, we gradually applied current until a current density of 5 {\"O} 106A/cm2 was achieved. The resistance of the p+-Si responded by gradually increasing, then decreasing with a precipitous drop. The resistance was reduced by a factor of 5 to 18. Mechanisms of the novel dopant activation are proposed. {\textcopyright} 1996 The American Physical Society.",

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N2 - Novel dopant activation in the heavily boron-doped p+-Si was created by applying an electrical current of high current density. The p+-Si was implanted by 40 keV BF+2 of 5 Ö 1015 ions /cm2 and annealed at 900 °C for 30 min to obtain a partial boron activation. For additional activation, we gradually applied current until a current density of 5 Ö 106A/cm2 was achieved. The resistance of the p+-Si responded by gradually increasing, then decreasing with a precipitous drop. The resistance was reduced by a factor of 5 to 18. Mechanisms of the novel dopant activation are proposed. © 1996 The American Physical Society.

AB - Novel dopant activation in the heavily boron-doped p+-Si was created by applying an electrical current of high current density. The p+-Si was implanted by 40 keV BF+2 of 5 Ö 1015 ions /cm2 and annealed at 900 °C for 30 min to obtain a partial boron activation. For additional activation, we gradually applied current until a current density of 5 Ö 106A/cm2 was achieved. The resistance of the p+-Si responded by gradually increasing, then decreasing with a precipitous drop. The resistance was reduced by a factor of 5 to 18. Mechanisms of the novel dopant activation are proposed. © 1996 The American Physical Society.

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