Novel approach to study patterned thin film local stress for microelectronics application

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • D. W. Zheng
  • Xinhua Wang
  • K. Shyu
  • C. T. Chang
  • Weijia Wen

Detail(s)

Original languageEnglish
Pages (from-to)568-571
Journal / PublicationInternational Conference on Solid-State and Integrated Circuit Technology Proceedings
Publication statusPublished - 1998
Externally publishedYes

Conference

TitleProceedings of the 1998 5th International Conference on Solid-State and Integrated Circuit Technology
CityBeijing, China
Period21 - 23 October 1998

Abstract

A novel testing methodology to study the full-field stress distribution in patterned microstructures has been developed for microelectronics applications. The testing structure consists of a Si diaphragm, whose deformation caused by the stress due to an overlying patterned thin film is captured by a Twyman-Green interferometer. The finite element model used to analyze this structure assumes a uniform in-plane biaxial initial stress in the patterned thin film before stress relaxation occurs, and gives the Si diaphragm deflection profile which matches the measured values. Hence the full-field stress in the patterned thin film and Si diaphragm can be given. The stress distribution in an electroless Ni pad on a Si diaphragm is used as an example.

Bibliographic Note

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Citation Format(s)

Novel approach to study patterned thin film local stress for microelectronics application. / Zheng, D. W.; Wang, Xinhua; Shyu, K.; Chang, C. T.; Wen, Weijia; Tu, K. N.

In: International Conference on Solid-State and Integrated Circuit Technology Proceedings, 1998, p. 568-571.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review