TY - JOUR
T1 - Novel approach to study patterned thin film local stress for microelectronics application
AU - Zheng, D. W.
AU - Wang, Xinhua
AU - Shyu, K.
AU - Chang, C. T.
AU - Wen, Weijia
AU - Tu, K. N.
N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].
PY - 1998
Y1 - 1998
N2 - A novel testing methodology to study the full-field stress distribution in patterned microstructures has been developed for microelectronics applications. The testing structure consists of a Si diaphragm, whose deformation caused by the stress due to an overlying patterned thin film is captured by a Twyman-Green interferometer. The finite element model used to analyze this structure assumes a uniform in-plane biaxial initial stress in the patterned thin film before stress relaxation occurs, and gives the Si diaphragm deflection profile which matches the measured values. Hence the full-field stress in the patterned thin film and Si diaphragm can be given. The stress distribution in an electroless Ni pad on a Si diaphragm is used as an example.
AB - A novel testing methodology to study the full-field stress distribution in patterned microstructures has been developed for microelectronics applications. The testing structure consists of a Si diaphragm, whose deformation caused by the stress due to an overlying patterned thin film is captured by a Twyman-Green interferometer. The finite element model used to analyze this structure assumes a uniform in-plane biaxial initial stress in the patterned thin film before stress relaxation occurs, and gives the Si diaphragm deflection profile which matches the measured values. Hence the full-field stress in the patterned thin film and Si diaphragm can be given. The stress distribution in an electroless Ni pad on a Si diaphragm is used as an example.
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UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0032226894&origin=recordpage
U2 - 10.1109/icsict.1998.785950
DO - 10.1109/icsict.1998.785950
M3 - RGC 21 - Publication in refereed journal
SP - 568
EP - 571
JO - International Conference on Solid-State and Integrated Circuit Technology Proceedings
JF - International Conference on Solid-State and Integrated Circuit Technology Proceedings
T2 - Proceedings of the 1998 5th International Conference on Solid-State and Integrated Circuit Technology
Y2 - 21 October 1998 through 23 October 1998
ER -