Non-volatile, reversible switching of the magnetic moment in Mn-doped ZnO films

X. L. Wang; Q. Shao; C. W. Leung; A. Ruotolo

doi:10.1063/1.4793639

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Non-volatile, reversible switching of the magnetic moment in Mn-doped ZnO films

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

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29 Scopus Citations

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Author(s)

X. L. Wang
Q. Shao
C. W. Leung
A. Ruotolo

Detail(s)

Original language	English
Article number	17C301
Journal / Publication	Journal of Applied Physics
Volume	113
Issue number	17
Publication status	Published - 7 May 2013

Link(s)

DOI	DOI https://doi.org/10.1063/1.4793639 Final Published version
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Attachment(s)	Documents 5809436.pdf Final Published version, 780 KB, PDF Publisher's Copyright Statement COPYRIGHT TERMS OF DEPOSITED FINAL PUBLISHED VERSION FILE: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in X. L. Wang, Q. Shao, C. W. Leung, and A. Ruotolo , "Non-volatile, reversible switching of the magnetic moment in Mn-doped ZnO films", Journal of Applied Physics 113, 17C301 (2013) and may be found at https://doi.org/10.1063/1.4793639.
Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-84877739867&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(177f6780-b8b1-48cf-b707-8d235b043c0d).html

Abstract

We report on the observation of a non-volatile, reversible switching of the magnetic moment in Mn-doped ZnO thin films. The system is a typical oxide memristor based on an oxygen-deficient semiconductor oxide. In the present study, the oxide semiconductor is ferromagnetic at room temperature. We found that the bistable switching of the resistive state was accompanied by a bistable switching of the magnetic moment at room temperature. Our results support the hypothesis that ferromagnetism in Mn-doped ZnO is mediated by oxygen-vacancies. © 2013 American Institute of Physics.