Non-volatile, reversible switching of the magnetic moment in Mn-doped ZnO films

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Original languageEnglish
Article number17C301
Journal / PublicationJournal of Applied Physics
Volume113
Issue number17
Publication statusPublished - 7 May 2013

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Abstract

We report on the observation of a non-volatile, reversible switching of the magnetic moment in Mn-doped ZnO thin films. The system is a typical oxide memristor based on an oxygen-deficient semiconductor oxide. In the present study, the oxide semiconductor is ferromagnetic at room temperature. We found that the bistable switching of the resistive state was accompanied by a bistable switching of the magnetic moment at room temperature. Our results support the hypothesis that ferromagnetism in Mn-doped ZnO is mediated by oxygen-vacancies. © 2013 American Institute of Physics.

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Non-volatile, reversible switching of the magnetic moment in Mn-doped ZnO films. / Wang, X. L.; Shao, Q.; Leung, C. W. et al.
In: Journal of Applied Physics, Vol. 113, No. 17, 17C301, 07.05.2013.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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