Non-volatile, electric control of magnetism in Mn-substituted ZnO

X. L. Wang; Q. Shao; C. W. Leung; R. Lortz; A. Ruotolo

doi:10.1063/1.4865428

Non-volatile, electric control of magnetism in Mn-substituted ZnO

Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

Overview

36 Scopus Citations

Scopus Metrics

View graph of relations

Author(s)

X. L. Wang
Q. Shao
C. W. Leung
R. Lortz
A. Ruotolo

Detail(s)

Original language	English
Article number	62409
Journal / Publication	Applied Physics Letters
Volume	104
Issue number	6
Publication status	Published - 10 Feb 2014

Link(s)

DOI	DOI https://doi.org/10.1063/1.4865428 Final Published version
	Check@CityULib
Attachment(s)	Documents 5858787.pdf Final Published version, 1.39 MB, PDF Publisher's Copyright Statement This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in X. L. Wang, Q. Shao, C. W. Leung, R. Lortz, and A. Ruotolo , "Non-volatile, electric control of magnetism in Mn-substituted ZnO", Appl. Phys. Lett. 104, 062409 (2014) and may be found at https://doi.org/10.1063/1.4865428.
Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-84902470591&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(7fb16ba9-b270-4151-860f-7e1f11a0a740).html

Abstract

We show that the magnetic properties of a dilute semiconductor oxide can be altered in a reversible and non-volatile manner by the application of an electric field. The selected ferromagnetic oxide was manganese-substituted zinc oxide. Bipolar resistive memory switching was induced in the film sandwiched between two metallic electrodes. The bistable switching of the resistive state was accompanied by a bistable switching of the magnetic moment. The scalability of the system was investigated by fabricating devices with lateral size down to 400nm.