Nonuniform and negative marker displacements induced by current crowding during electromigration in flip-chip Sn-0.7Cu solder joints

S. W. Liang; Hsiang-Yao Hsiao; Chih Chen; Luhua Xu; K. N. Tu; Yi-Shao Lai

doi:10.1007/s11664-009-0913-1

Author(s)

S. W. Liang
Hsiang-Yao Hsiao
Chih Chen
Luhua Xu
Yi-Shao Lai

Detail(s)

Original language	English
Pages (from-to)	2443-2448
Journal / Publication	Journal of Electronic Materials
Volume	38
Issue number	12
Publication status	Published - Dec 2009
Externally published	Yes

Link(s)

DOI	DOI https://doi.org/10.1007/s11664-009-0913-1 Final Published version
	Check@CityULib
Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-72549113772&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(305f7085-adfb-4669-a156-2869fe599453).html

Abstract

A quantitative analysis of the nonuniform distribution of current density and nonuniform rate of electromigration has been carried out by measuring the movement of an array of diffusion markers. Tiny marker arrays were fabricated by focused ion beam on the polished surface of flip-chip solder joints near the anode to measure the electromigration rate. The marker velocity at the current-crowding region was found to be at least five times larger than at locations far from the region. Some of the markers in the low-current-density region possess negative velocities, indicating that backflow occurs during the electromigration. The backflow, in which the atomic flow is against the electron flow, is explained by a constant-volume model as well as the back-stress induced by electromigration. © 2009 TMS.

Research Area(s)

Electromigration, Pb-free solder

Bibliographic Note

Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

Citation Format(s)

[ RIS ] [ BibTeX ]

Nonuniform and negative marker displacements induced by current crowding during electromigration in flip-chip Sn-0.7Cu solder joints. / Liang, S. W.; Hsiao, Hsiang-Yao; Chen, Chih et al.
In: Journal of Electronic Materials, Vol. 38, No. 12, 12.2009, p. 2443-2448.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Liang, SW, Hsiao, H-Y, Chen, C, Xu, L, Tu, KN & Lai, Y-S 2009, 'Nonuniform and negative marker displacements induced by current crowding during electromigration in flip-chip Sn-0.7Cu solder joints', Journal of Electronic Materials, vol. 38, no. 12, pp. 2443-2448. https://doi.org/10.1007/s11664-009-0913-1

Liang, S. W., Hsiao, H.-Y., Chen, C., Xu, L., Tu, K. N., & Lai, Y.-S. (2009). Nonuniform and negative marker displacements induced by current crowding during electromigration in flip-chip Sn-0.7Cu solder joints. Journal of Electronic Materials, 38(12), 2443-2448. https://doi.org/10.1007/s11664-009-0913-1

Liang SW, Hsiao HY, Chen C, Xu L, Tu KN, Lai YS. Nonuniform and negative marker displacements induced by current crowding during electromigration in flip-chip Sn-0.7Cu solder joints. Journal of Electronic Materials. 2009 Dec;38(12):2443-2448. doi: 10.1007/s11664-009-0913-1

Liang, S. W. ; Hsiao, Hsiang-Yao ; Chen, Chih et al. / Nonuniform and negative marker displacements induced by current crowding during electromigration in flip-chip Sn-0.7Cu solder joints. In: Journal of Electronic Materials. 2009 ; Vol. 38, No. 12. pp. 2443-2448.