TY - JOUR
T1 - Nonmagnetic spin-field-effect transistor
AU - Liu, Jun-Feng
AU - Chan, K. S.
AU - Wang, Jun
PY - 2012/8/20
Y1 - 2012/8/20
N2 - We propose a spin-field-effect transistor based on a semiconductor quantum wire with spin-orbit coupling and normal electrical contacts, instead of the ferromagnetic contacts required in the Datta and Das spin-field-effect transistor. The spin of electrons can be completely polarized and detected by manipulating and detecting the orbital wave-function using the spin-orbit coupling. The central spin-orbit coupled region consists of two segments with different strengths of Rashba spin-orbit coupling α 1 and α 2, respectively. The conductance is nearly 1 for the case of α 2 = α 1 and 0 for α 2 = -α 1 in a wide energy range. The device can work as a nonmagnetic spin transistor, which can have important applications in spintronics. © 2012 American Institute of Physics.
AB - We propose a spin-field-effect transistor based on a semiconductor quantum wire with spin-orbit coupling and normal electrical contacts, instead of the ferromagnetic contacts required in the Datta and Das spin-field-effect transistor. The spin of electrons can be completely polarized and detected by manipulating and detecting the orbital wave-function using the spin-orbit coupling. The central spin-orbit coupled region consists of two segments with different strengths of Rashba spin-orbit coupling α 1 and α 2, respectively. The conductance is nearly 1 for the case of α 2 = α 1 and 0 for α 2 = -α 1 in a wide energy range. The device can work as a nonmagnetic spin transistor, which can have important applications in spintronics. © 2012 American Institute of Physics.
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U2 - 10.1063/1.4747494
DO - 10.1063/1.4747494
M3 - RGC 21 - Publication in refereed journal
SN - 0003-6951
VL - 101
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 8
M1 - 82407
ER -