TY - JOUR
T1 - Nonlinear current-voltage characteristics of bismuth nanodot structures
AU - Chiu, PHP
AU - Shih, Ishiang
PY - 2006/2/13
Y1 - 2006/2/13
N2 - Bismuth (Bi) nanodot structures have been fabricated using the proximity effects of electron-beam writing technique. Bi nanodots, each 100 nm in diameter, were fabricated on an oxidized silicon substrate with a 200 nm thick silicon oxide layer. Current-voltage (I-V) measurements were performed under low vacuum condition at temperatures from 77 to 300 K. The measurement results showed significant nonlinearities with symmetric resistance peaks, indicating the existence of energy level spacing within the nanodot structures. The successful observation of energy level spacing in such a large nanodot is due to the small effective mass of Bi material, which leads to measurable energy level spacing.
AB - Bismuth (Bi) nanodot structures have been fabricated using the proximity effects of electron-beam writing technique. Bi nanodots, each 100 nm in diameter, were fabricated on an oxidized silicon substrate with a 200 nm thick silicon oxide layer. Current-voltage (I-V) measurements were performed under low vacuum condition at temperatures from 77 to 300 K. The measurement results showed significant nonlinearities with symmetric resistance peaks, indicating the existence of energy level spacing within the nanodot structures. The successful observation of energy level spacing in such a large nanodot is due to the small effective mass of Bi material, which leads to measurable energy level spacing.
KW - SINGLE-ELECTRON DEVICES
KW - ON-INSULATOR NANOWIRE
KW - TRANSISTORS
UR - http://www.scopus.com/inward/record.url?scp=32944480729&partnerID=8YFLogxK
UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-32944480729&origin=recordpage
U2 - 10.1063/1.2177539
DO - 10.1063/1.2177539
M3 - RGC 21 - Publication in refereed journal
SN - 0003-6951
VL - 88
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 7
M1 - 072110
ER -