Abstract
We report on the observation of a non-volatile, reversible switching of the magnetic moment in Mn-doped ZnO thin films. The system is a typical oxide memristor based on an oxygen-deficient semiconductor oxide. In the present study, the oxide semiconductor is ferromagnetic at room temperature. We found that the bistable switching of the resistive state was accompanied by a bistable switching of the magnetic moment at room temperature. Our results support the hypothesis that ferromagnetism in Mn-doped ZnO is mediated by oxygen-vacancies. © 2013 American Institute of Physics.
| Original language | English |
|---|---|
| Article number | 17C301 |
| Journal | Journal of Applied Physics |
| Volume | 113 |
| Issue number | 17 |
| DOIs | |
| Publication status | Published - 7 May 2013 |
Publisher's Copyright Statement
- COPYRIGHT TERMS OF DEPOSITED FINAL PUBLISHED VERSION FILE: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in X. L. Wang, Q. Shao, C. W. Leung, and A. Ruotolo , "Non-volatile, reversible switching of the magnetic moment in Mn-doped ZnO films", Journal of Applied Physics 113, 17C301 (2013) and may be found at https://doi.org/10.1063/1.4793639.
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