Abstract
We show that the magnetic properties of a dilute semiconductor oxide can be altered in a reversible and non-volatile manner by the application of an electric field. The selected ferromagnetic oxide was manganese-substituted zinc oxide. Bipolar resistive memory switching was induced in the film sandwiched between two metallic electrodes. The bistable switching of the resistive state was accompanied by a bistable switching of the magnetic moment. The scalability of the system was investigated by fabricating devices with lateral size down to 400nm.
| Original language | English |
|---|---|
| Article number | 62409 |
| Journal | Applied Physics Letters |
| Volume | 104 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 10 Feb 2014 |
Publisher's Copyright Statement
- COPYRIGHT TERMS OF DEPOSITED FINAL PUBLISHED VERSION FILE: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in X. L. Wang, Q. Shao, C. W. Leung, R. Lortz, and A. Ruotolo , "Non-volatile, electric control of magnetism in Mn-substituted ZnO", Appl. Phys. Lett. 104, 062409 (2014) and may be found at https://doi.org/10.1063/1.4865428.
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