Non-equilibrium GaNAs alloys with band gap ranging from 0.8-3.4 eV

K. M. Yu; S. V. Novikov; R. Broesler; C. R. Staddon; M. Hawkridge; Z. Liliental-Weber; I. Demchenko; J. D. Denlinger; V. M. Kao; F. Luckert; R. W. Martin; W. Walukiewicz; C. T. Foxon

doi:10.1002/pssc.200983430

Non-equilibrium GaNAs alloys with band gap ranging from 0.8-3.4 eV

K. M. Yu^*, S. V. Novikov, R. Broesler, C. R. Staddon, M. Hawkridge, Z. Liliental-Weber, I. Demchenko, J. D. Denlinger, V. M. Kao, F. Luckert, R. W. Martin, W. Walukiewicz, C. T. Foxon

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

16 Citations (Scopus)

Abstract

A new alloy system, the GaN_1-xAs_x alloys in the whole composition range was successfully synthesized using the non-equilibrium low temperature molecular beam epitaxy method. The alloys are amorphous in the composition range of 0.17 < x < 0.75 and crystalline outside this region. The amorphous films have smooth morphology, homogeneous composition and sharp, well defined optical absorption edges. The bandgap energy varies in a broad energy range from ∼3.4 eV in GaN to∼0.8 eV at x∼0.85. The reduction of the band gap can be attributed primarily to the downward movement of the conduction band for alloys with x > 0.2, and to the upward movement of the valence band for alloys with x < 0.2. © 2010 Wiley-VCH Verlag GmbH & Co. KGaA.

Original language	English
Pages (from-to)	1847-1849
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	7
Issue number	7-8
DOIs	https://doi.org/10.1002/pssc.200983430
Publication status	Published - 2010
Externally published	Yes
Event	8th International Conference on Nitride Semiconductors, ICNS-8 - Jeju, Korea, Republic of Duration: 18 Oct 2009 → 23 Oct 2009

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SDG 7 Affordable and Clean Energy

Research Keywords

Band structure
GaNAs
MBE
Morphology
Optical properties
Structure

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Yu, K. M., Novikov, S. V., Broesler, R., Staddon, C. R., Hawkridge, M., Liliental-Weber, Z., Demchenko, I., Denlinger, J. D., Kao, V. M., Luckert, F., Martin, R. W., Walukiewicz, W., & Foxon, C. T. (2010). Non-equilibrium GaNAs alloys with band gap ranging from 0.8-3.4 eV. Physica Status Solidi (C) Current Topics in Solid State Physics, 7(7-8), 1847-1849. https://doi.org/10.1002/pssc.200983430

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title = "Non-equilibrium GaNAs alloys with band gap ranging from 0.8-3.4 eV",

abstract = "A new alloy system, the GaN1-xAsx alloys in the whole composition range was successfully synthesized using the non-equilibrium low temperature molecular beam epitaxy method. The alloys are amorphous in the composition range of 0.17 < x < 0.75 and crystalline outside this region. The amorphous films have smooth morphology, homogeneous composition and sharp, well defined optical absorption edges. The bandgap energy varies in a broad energy range from ∼3.4 eV in GaN to∼0.8 eV at x∼0.85. The reduction of the band gap can be attributed primarily to the downward movement of the conduction band for alloys with x > 0.2, and to the upward movement of the valence band for alloys with x < 0.2. {\textcopyright} 2010 Wiley-VCH Verlag GmbH & Co. KGaA.",

keywords = "Band structure, GaNAs, MBE, Morphology, Optical properties, Structure",

author = "Yu, {K. M.} and Novikov, {S. V.} and R. Broesler and Staddon, {C. R.} and M. Hawkridge and Z. Liliental-Weber and I. Demchenko and Denlinger, {J. D.} and Kao, {V. M.} and F. Luckert and Martin, {R. W.} and W. Walukiewicz and Foxon, {C. T.}",

year = "2010",

doi = "10.1002/pssc.200983430",

language = "English",

volume = "7",

pages = "1847--1849",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag GmbH",

number = "7-8",

note = "8th International Conference on Nitride Semiconductors, ICNS-8 ; Conference date: 18-10-2009 Through 23-10-2009",

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Yu, KM, Novikov, SV, Broesler, R, Staddon, CR, Hawkridge, M, Liliental-Weber, Z, Demchenko, I, Denlinger, JD, Kao, VM, Luckert, F, Martin, RW, Walukiewicz, W & Foxon, CT 2010, 'Non-equilibrium GaNAs alloys with band gap ranging from 0.8-3.4 eV', Physica Status Solidi (C) Current Topics in Solid State Physics, vol. 7, no. 7-8, pp. 1847-1849. https://doi.org/10.1002/pssc.200983430

TY - JOUR

T1 - Non-equilibrium GaNAs alloys with band gap ranging from 0.8-3.4 eV

AU - Yu, K. M.

AU - Novikov, S. V.

AU - Broesler, R.

AU - Staddon, C. R.

AU - Hawkridge, M.

AU - Liliental-Weber, Z.

AU - Demchenko, I.

AU - Denlinger, J. D.

AU - Kao, V. M.

AU - Luckert, F.

AU - Martin, R. W.

AU - Walukiewicz, W.

AU - Foxon, C. T.

PY - 2010

Y1 - 2010

N2 - A new alloy system, the GaN1-xAsx alloys in the whole composition range was successfully synthesized using the non-equilibrium low temperature molecular beam epitaxy method. The alloys are amorphous in the composition range of 0.17 < x < 0.75 and crystalline outside this region. The amorphous films have smooth morphology, homogeneous composition and sharp, well defined optical absorption edges. The bandgap energy varies in a broad energy range from ∼3.4 eV in GaN to∼0.8 eV at x∼0.85. The reduction of the band gap can be attributed primarily to the downward movement of the conduction band for alloys with x > 0.2, and to the upward movement of the valence band for alloys with x < 0.2. © 2010 Wiley-VCH Verlag GmbH & Co. KGaA.

AB - A new alloy system, the GaN1-xAsx alloys in the whole composition range was successfully synthesized using the non-equilibrium low temperature molecular beam epitaxy method. The alloys are amorphous in the composition range of 0.17 < x < 0.75 and crystalline outside this region. The amorphous films have smooth morphology, homogeneous composition and sharp, well defined optical absorption edges. The bandgap energy varies in a broad energy range from ∼3.4 eV in GaN to∼0.8 eV at x∼0.85. The reduction of the band gap can be attributed primarily to the downward movement of the conduction band for alloys with x > 0.2, and to the upward movement of the valence band for alloys with x < 0.2. © 2010 Wiley-VCH Verlag GmbH & Co. KGaA.

KW - Band structure

KW - GaNAs

KW - MBE

KW - Morphology

KW - Optical properties

KW - Structure

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U2 - 10.1002/pssc.200983430

DO - 10.1002/pssc.200983430

M3 - RGC 21 - Publication in refereed journal

SN - 1862-6351

VL - 7

SP - 1847

EP - 1849

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

IS - 7-8

T2 - 8th International Conference on Nitride Semiconductors, ICNS-8

Y2 - 18 October 2009 through 23 October 2009

ER -

Non-equilibrium GaNAs alloys with band gap ranging from 0.8-3.4 eV

Abstract

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