NixCd1-xO : Semiconducting alloys with extreme type III band offsets

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

  • Christopher A. Francis
  • Douglas M. Detert
  • Guibin Chen
  • Oscar D. Dubon
  • Wladek Walukiewicz

Detail(s)

Original languageEnglish
Article number022110
Journal / PublicationApplied Physics Letters
Volume106
Issue number2
Publication statusPublished - 12 Jan 2015

Link(s)

Abstract

We have synthesized alloys of NiO and CdO that exhibit an extreme type III band offset and have studied the structural, electrical, and optical properties of NixCd1-xO over the entire composition range. The alloys are rocksalt structured and exhibit a monotonic shift of the (220) diffraction peak to higher 2θ angles with increasing Ni concentration. The electron mobility and electron concentration decrease with increasing x, and samples become insulating for Ni content x > 0.44. This decrease in n-type conductivity is consistent with the movement of the conduction band minimum from below to above the Fermi stabilization energy with increasing Ni content. The optical absorption edge of the alloys can be tuned continuously from CdO to NiO. The intrinsic gap of the alloys was calculated with the electrical and optical measurements and accounting for Burstein-Moss carrier filling and carrier-induced bandgap renormalization effects. We observe an uncommon composition dependence of the intrinsic bandgap on the alloy composition. The effect is tentatively attributed to an interaction between extended states of the conduction band and localized d-states of Ni. © 2015 AIP Publishing LLC.

Research Area(s)

Citation Format(s)

NixCd1-xO: Semiconducting alloys with extreme type III band offsets. / Francis, Christopher A.; Detert, Douglas M.; Chen, Guibin et al.
In: Applied Physics Letters, Vol. 106, No. 2, 022110, 12.01.2015.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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