Nitrogen Plasma Source Ion Implantation (PSII) for improvement of blood-compatibility of silicon

P. Yang; G. J. Wan; X. Xie; Y. X. Leng; H. F. Zhou; P. K. Chu; N. Huang

doi:10.4028/www.scientific.net/KEM.288-289.335

Nitrogen Plasma Source Ion Implantation (PSII) for improvement of blood-compatibility of silicon

P. Yang^*, G. J. Wan, X. Xie, Y. X. Leng, H. F. Zhou, P. K. Chu, N. Huang^*

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

2 Citations (Scopus)

Abstract

Nitrogen is implanted into silicon wafers using a Plasma Source Ion Implantation (PSII) device and then the silicon wafer is annealing by heat treatment. The implantation is carried out at a target bias of -30 keV. The effects of high voltage nitrogen implantation on the silicon structure, wettability and bloodcompatibility are investigated. After nitrogen implantation, the silicon wafer is seen to possess an amorphous structure and to be more hydrophilic. Blood compatibility of the silicon wafer is improved by nitrogen implantation and annealing. It is suggested that this improvement of blood compatibility is related to the surface wettability. © 2005 Trans Tech Publications Ltd. All Rights Reserved

Original language	English
Pages (from-to)	335-338
Journal	Key Engineering Materials
Volume	288-289
Online published	15 Jun 2005
DOIs	https://doi.org/10.4028/www.scientific.net/KEM.288-289.335
Publication status	Published - 2005

Research Keywords

Bloodcompatibility
Nitrogen-implanted silicon
Plasma source ion implantation (PSII)

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@article{461c2aeb2f1646ebae7bc847a2e6d1b3,

title = "Nitrogen Plasma Source Ion Implantation (PSII) for improvement of blood-compatibility of silicon",

abstract = "Nitrogen is implanted into silicon wafers using a Plasma Source Ion Implantation (PSII) device and then the silicon wafer is annealing by heat treatment. The implantation is carried out at a target bias of -30 keV. The effects of high voltage nitrogen implantation on the silicon structure, wettability and bloodcompatibility are investigated. After nitrogen implantation, the silicon wafer is seen to possess an amorphous structure and to be more hydrophilic. Blood compatibility of the silicon wafer is improved by nitrogen implantation and annealing. It is suggested that this improvement of blood compatibility is related to the surface wettability. {\textcopyright} 2005 Trans Tech Publications Ltd. All Rights Reserved",

keywords = "Bloodcompatibility, Nitrogen-implanted silicon, Plasma source ion implantation (PSII)",

author = "P. Yang and Wan, {G. J.} and X. Xie and Leng, {Y. X.} and Zhou, {H. F.} and Chu, {P. K.} and N. Huang",

year = "2005",

doi = "10.4028/www.scientific.net/KEM.288-289.335",

language = "English",

volume = "288-289",

pages = "335--338",

journal = "Key Engineering Materials",

issn = "1013-9826",

publisher = "Trans Tech Publications Ltd.",

}

TY - JOUR

T1 - Nitrogen Plasma Source Ion Implantation (PSII) for improvement of blood-compatibility of silicon

AU - Yang, P.

AU - Wan, G. J.

AU - Xie, X.

AU - Leng, Y. X.

AU - Zhou, H. F.

AU - Chu, P. K.

AU - Huang, N.

PY - 2005

Y1 - 2005

N2 - Nitrogen is implanted into silicon wafers using a Plasma Source Ion Implantation (PSII) device and then the silicon wafer is annealing by heat treatment. The implantation is carried out at a target bias of -30 keV. The effects of high voltage nitrogen implantation on the silicon structure, wettability and bloodcompatibility are investigated. After nitrogen implantation, the silicon wafer is seen to possess an amorphous structure and to be more hydrophilic. Blood compatibility of the silicon wafer is improved by nitrogen implantation and annealing. It is suggested that this improvement of blood compatibility is related to the surface wettability. © 2005 Trans Tech Publications Ltd. All Rights Reserved

AB - Nitrogen is implanted into silicon wafers using a Plasma Source Ion Implantation (PSII) device and then the silicon wafer is annealing by heat treatment. The implantation is carried out at a target bias of -30 keV. The effects of high voltage nitrogen implantation on the silicon structure, wettability and bloodcompatibility are investigated. After nitrogen implantation, the silicon wafer is seen to possess an amorphous structure and to be more hydrophilic. Blood compatibility of the silicon wafer is improved by nitrogen implantation and annealing. It is suggested that this improvement of blood compatibility is related to the surface wettability. © 2005 Trans Tech Publications Ltd. All Rights Reserved

KW - Bloodcompatibility

KW - Nitrogen-implanted silicon

KW - Plasma source ion implantation (PSII)

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UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-33847346198&origin=recordpage

U2 - 10.4028/www.scientific.net/KEM.288-289.335

DO - 10.4028/www.scientific.net/KEM.288-289.335

M3 - RGC 21 - Publication in refereed journal

SN - 1013-9826

VL - 288-289

SP - 335

EP - 338

JO - Key Engineering Materials

JF - Key Engineering Materials

ER -

Nitrogen Plasma Source Ion Implantation (PSII) for improvement of blood-compatibility of silicon

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