Nitrogen-induced increase of the maximum electron concentration in group III-N-V alloys

K. M. Yu; W. Walukiewicz; W. Shan; J. W. Ager III; J. Wu; E. E. Haller; J. F. Geisz; D. J. Friedman; J. M. Olson

doi:10.1103/PhysRevB.61.R13337

Nitrogen-induced increase of the maximum electron concentration in group III-N-V alloys

K. M. Yu, W. Walukiewicz, W. Shan, J. W. Ager III, J. Wu, E. E. Haller, J. F. Geisz, D. J. Friedman, J. M. Olson

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Abstract

The maximum free-electron concentration is observed to increase dramatically with the nitrogen content x in heavily Se-doped Ga_1-3xIn_3xN_xAs_1-x (0≤x19 cm^-3 was observed at x=0.033; a value more than 20 times larger than that observed in GaAs films grown under similar conditions. It is shown that the increase is caused by a combination of two effects: (1) a downward shift of the conduction band and (2) an increase of the electron effective mass caused by flattening of the conduction-band minimum. Both these effects are due to modifications to the conduction-band structure caused by an anticrossing interaction of a localized N state and the conduction band of the III-V host. ©2000 The American Physical Society.

Original language	English
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	61
Issue number	20
DOIs	https://doi.org/10.1103/PhysRevB.61.R13337
Publication status	Published - 15 May 2000
Externally published	Yes

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@article{8931bd4030cc4153b548015099f6a98f,

title = "Nitrogen-induced increase of the maximum electron concentration in group III-N-V alloys",

abstract = "The maximum free-electron concentration is observed to increase dramatically with the nitrogen content x in heavily Se-doped Ga1-3xIn3xNxAs1-x (0≤x19 cm-3 was observed at x=0.033; a value more than 20 times larger than that observed in GaAs films grown under similar conditions. It is shown that the increase is caused by a combination of two effects: (1) a downward shift of the conduction band and (2) an increase of the electron effective mass caused by flattening of the conduction-band minimum. Both these effects are due to modifications to the conduction-band structure caused by an anticrossing interaction of a localized N state and the conduction band of the III-V host. {\textcopyright}2000 The American Physical Society.",

author = "Yu, {K. M.} and W. Walukiewicz and W. Shan and {Ager III}, {J. W.} and J. Wu and Haller, {E. E.} and Geisz, {J. F.} and Friedman, {D. J.} and Olson, {J. M.}",

year = "2000",

month = may,

day = "15",

doi = "10.1103/PhysRevB.61.R13337",

language = "English",

volume = "61",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "0163-1829",

publisher = "American Physical Society",

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TY - JOUR

T1 - Nitrogen-induced increase of the maximum electron concentration in group III-N-V alloys

AU - Yu, K. M.

AU - Walukiewicz, W.

AU - Shan, W.

AU - Ager III, J. W.

AU - Wu, J.

AU - Haller, E. E.

AU - Geisz, J. F.

AU - Friedman, D. J.

AU - Olson, J. M.

PY - 2000/5/15

Y1 - 2000/5/15

N2 - The maximum free-electron concentration is observed to increase dramatically with the nitrogen content x in heavily Se-doped Ga1-3xIn3xNxAs1-x (0≤x19 cm-3 was observed at x=0.033; a value more than 20 times larger than that observed in GaAs films grown under similar conditions. It is shown that the increase is caused by a combination of two effects: (1) a downward shift of the conduction band and (2) an increase of the electron effective mass caused by flattening of the conduction-band minimum. Both these effects are due to modifications to the conduction-band structure caused by an anticrossing interaction of a localized N state and the conduction band of the III-V host. ©2000 The American Physical Society.

AB - The maximum free-electron concentration is observed to increase dramatically with the nitrogen content x in heavily Se-doped Ga1-3xIn3xNxAs1-x (0≤x19 cm-3 was observed at x=0.033; a value more than 20 times larger than that observed in GaAs films grown under similar conditions. It is shown that the increase is caused by a combination of two effects: (1) a downward shift of the conduction band and (2) an increase of the electron effective mass caused by flattening of the conduction-band minimum. Both these effects are due to modifications to the conduction-band structure caused by an anticrossing interaction of a localized N state and the conduction band of the III-V host. ©2000 The American Physical Society.

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UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0001243688&origin=recordpage

UR - https://app-overton-io.ezproxy.cityu.edu.hk/articles.php?query=10.1103/PhysRevB.61.R13337

U2 - 10.1103/PhysRevB.61.R13337

DO - 10.1103/PhysRevB.61.R13337

M3 - RGC 22 - Publication in policy or professional journal

SN - 0163-1829

VL - 61

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 20

ER -

Nitrogen-induced increase of the maximum electron concentration in group III-N-V alloys

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