Nitrogen-induced enhancement of the free electron concentration in sulfur implanted GaNxAs1-x

K. M. Yu; W. Walukiewicz; W. Shan; J. Wu; J. W. Ager III; E. E. Haller; J. F. Geisz; M. C. Ridgway

doi:10.1063/1.1320872

Nitrogen-induced enhancement of the free electron concentration in sulfur implanted GaNxAs1-x

K. M. Yu, W. Walukiewicz, W. Shan, J. Wu, J. W. Ager III, E. E. Haller, J. F. Geisz, M. C. Ridgway

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

32 Citations (Scopus)

Abstract

We have achieved a large increase of the activation efficiency of sulfur atoms implanted into GaN_xAs^1-x thin films. For thin films with only 0.8% N content, we find a maximum free electron concentration of >6×10¹⁸cm^-3 for implanted S concentration higher than 10¹⁹cm^-3, about 20 times larger than that in semi-insulating GaAs implanted and annealed under the same conditions. This large increase of the free electron concentration can be quantitatively explained with the recently developed band anticrossing model. © 2000 American Institute of Physics.

Original language	English
Pages (from-to)	2858-2860
Journal	Applied Physics Letters
Volume	77
Issue number	18
DOIs	https://doi.org/10.1063/1.1320872
Publication status	Published - 30 Oct 2000
Externally published	Yes

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title = "Nitrogen-induced enhancement of the free electron concentration in sulfur implanted GaNxAs1-x",

abstract = "We have achieved a large increase of the activation efficiency of sulfur atoms implanted into GaNxAs1-x thin films. For thin films with only 0.8% N content, we find a maximum free electron concentration of >6×1018cm-3 for implanted S concentration higher than 1019cm-3, about 20 times larger than that in semi-insulating GaAs implanted and annealed under the same conditions. This large increase of the free electron concentration can be quantitatively explained with the recently developed band anticrossing model. {\textcopyright} 2000 American Institute of Physics.",

author = "Yu, {K. M.} and W. Walukiewicz and W. Shan and J. Wu and {Ager III}, {J. W.} and Haller, {E. E.} and Geisz, {J. F.} and Ridgway, {M. C.}",

year = "2000",

month = oct,

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doi = "10.1063/1.1320872",

language = "English",

volume = "77",

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TY - JOUR

T1 - Nitrogen-induced enhancement of the free electron concentration in sulfur implanted GaNxAs1-x

AU - Yu, K. M.

AU - Walukiewicz, W.

AU - Shan, W.

AU - Wu, J.

AU - Ager III, J. W.

AU - Haller, E. E.

AU - Geisz, J. F.

AU - Ridgway, M. C.

PY - 2000/10/30

Y1 - 2000/10/30

N2 - We have achieved a large increase of the activation efficiency of sulfur atoms implanted into GaNxAs1-x thin films. For thin films with only 0.8% N content, we find a maximum free electron concentration of >6×1018cm-3 for implanted S concentration higher than 1019cm-3, about 20 times larger than that in semi-insulating GaAs implanted and annealed under the same conditions. This large increase of the free electron concentration can be quantitatively explained with the recently developed band anticrossing model. © 2000 American Institute of Physics.

AB - We have achieved a large increase of the activation efficiency of sulfur atoms implanted into GaNxAs1-x thin films. For thin films with only 0.8% N content, we find a maximum free electron concentration of >6×1018cm-3 for implanted S concentration higher than 1019cm-3, about 20 times larger than that in semi-insulating GaAs implanted and annealed under the same conditions. This large increase of the free electron concentration can be quantitatively explained with the recently developed band anticrossing model. © 2000 American Institute of Physics.

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U2 - 10.1063/1.1320872

DO - 10.1063/1.1320872

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 77

SP - 2858

EP - 2860

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

ER -

Nitrogen-induced enhancement of the free electron concentration in sulfur implanted GaNxAs1-x

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