Nitrogen Incorporation in Hafnium Oxide Using Plasma Immersion Implantation

Research output: Conference Papers (RGC: 31A, 31B, 32, 33)32_Refereed conference paper (without host publication)peer-review

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Author(s)

  • Banani Sen
  • B. L. Yang
  • A.P. Huang
  • V. Filipt
  • C. K. Sarkar

Detail(s)

Original languageEnglish
Pages89-90
Publication statusPublished - Nov 2006

Conference

Title2006 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology (IWDTF2006)
LocationKawasaki City Industrial Promotion Hall
PlaceJapan
CityKanagawa
Period8 - 10 November 2006

Bibliographic Note

Research Unit(s) information for this publication is provided by the author(s) concerned.

Citation Format(s)

Nitrogen Incorporation in Hafnium Oxide Using Plasma Immersion Implantation. / Sen, Banani; Wong, Hei; Yang, B. L. et al.
2006. 89-90 Paper presented at 2006 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology (IWDTF2006), Kanagawa, Japan.

Research output: Conference Papers (RGC: 31A, 31B, 32, 33)32_Refereed conference paper (without host publication)peer-review