Nitrogen Doping Effect in Cu4O3 Thin Films Fabricated by Radio Frequency Magnetron Sputtering

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

  • Md Abdul Majed Patwary
  • Katsuhiko Saito
  • Qixin Guo
  • Tooru Tanaka
  • Wladek Walukiewicz

Detail(s)

Original languageEnglish
Article number1900363
Journal / PublicationPhysica Status Solidi (B) Basic Research
Volume257
Issue number2
Online published19 Sept 2019
Publication statusPublished - Feb 2020

Abstract

N-doped Cu4O3 thin films are deposited by radio frequency magnetron sputtering in an ambient of Ar, O2, and N2 using a pure Cu target. The structural, electrical, and optical properties are investigated systematically with the variation of N2 gas flow during deposition. Results reveal that N2 flow rate has a strong influence on both the composition and functional properties of the resulting Cu4O3 films. X-ray diffraction (XRD) and Raman spectroscopy indicate the formation of the single phase of N-doped Cu4O3 at a low N2 flow rate of up to 4.3 sccm. From the optical absorption analyses, both undoped and N-doped Cu4O3 films show a direct forbidden transition at Eg = 1.34–1.44 eV. All the undoped and N-doped Cu4O3 thin films show p-type conductivity, and N-doped Cu4O3 shows lower resistivity on the order of 101–102 Ω cm. These results indicate clearly that N-doped Cu4O3 is a very promising material for the absorber in low-cost thin film solar cells.

Research Area(s)

  • Cu4O3, low-cost thin films, nitrogen doping, radio frequency sputtering

Citation Format(s)

Nitrogen Doping Effect in Cu4O3 Thin Films Fabricated by Radio Frequency Magnetron Sputtering. / Patwary, Md Abdul Majed; Saito, Katsuhiko; Guo, Qixin et al.
In: Physica Status Solidi (B) Basic Research, Vol. 257, No. 2, 1900363, 02.2020.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review