Nitrogen deep accepters in ZnO nanowires induced by ammonia plasma

Rui Huang; Shuigang Xu; Wenhao Guo; Lin Wang; Jie Song; Tsz-Wai Ng; Jianan Huang; Shuit-Tong Lee; Shengwang Du; Ning Wang

doi:10.1063/1.3647773

Nitrogen deep accepters in ZnO nanowires induced by ammonia plasma

Rui Huang, Shuigang Xu, Wenhao Guo, Lin Wang, Jie Song, Tsz-Wai Ng, Jianan Huang, Shuit-Tong Lee, Shengwang Du, Ning Wang

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

17 Citations (Scopus)

Abstract

Nitrogen doping in ZnO nanowires was achieved through ammonia plasma treatment followed by thermal annealing. The strong dependence of the red light emission from the nanowires excited by 2.4 eV on the nitrogen concentration, suggests that the red light emission originates from nitrogen related defects. The mechanism responsible for the red light emission is in good agreement with the deep-acceptor model of nitrogen defects, clarifying that nitrogen atoms caused deep accepters in ZnO nanowires. Based on this model, the enhanced green emission from defects in nitrogen-doped samples (excited by 325 nm line) can be well explained by the increase of the concentration of activated oxygen vacancies resulting from the compensation of nitrogen deep acceptors. © 2011 American Institute of Physics.

Original language	English
Article number	143112
Journal	Applied Physics Letters
Volume	99
Issue number	14
DOIs	https://doi.org/10.1063/1.3647773
Publication status	Published - 3 Oct 2011

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@article{7370ec531de4493983cbc37efdb79501,

title = "Nitrogen deep accepters in ZnO nanowires induced by ammonia plasma",

abstract = "Nitrogen doping in ZnO nanowires was achieved through ammonia plasma treatment followed by thermal annealing. The strong dependence of the red light emission from the nanowires excited by 2.4 eV on the nitrogen concentration, suggests that the red light emission originates from nitrogen related defects. The mechanism responsible for the red light emission is in good agreement with the deep-acceptor model of nitrogen defects, clarifying that nitrogen atoms caused deep accepters in ZnO nanowires. Based on this model, the enhanced green emission from defects in nitrogen-doped samples (excited by 325 nm line) can be well explained by the increase of the concentration of activated oxygen vacancies resulting from the compensation of nitrogen deep acceptors. {\textcopyright} 2011 American Institute of Physics.",

author = "Rui Huang and Shuigang Xu and Wenhao Guo and Lin Wang and Jie Song and Tsz-Wai Ng and Jianan Huang and Shuit-Tong Lee and Shengwang Du and Ning Wang",

year = "2011",

month = oct,

day = "3",

doi = "10.1063/1.3647773",

language = "English",

volume = "99",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Nitrogen deep accepters in ZnO nanowires induced by ammonia plasma

AU - Huang, Rui

AU - Xu, Shuigang

AU - Guo, Wenhao

AU - Wang, Lin

AU - Song, Jie

AU - Ng, Tsz-Wai

AU - Huang, Jianan

AU - Lee, Shuit-Tong

AU - Du, Shengwang

AU - Wang, Ning

PY - 2011/10/3

Y1 - 2011/10/3

N2 - Nitrogen doping in ZnO nanowires was achieved through ammonia plasma treatment followed by thermal annealing. The strong dependence of the red light emission from the nanowires excited by 2.4 eV on the nitrogen concentration, suggests that the red light emission originates from nitrogen related defects. The mechanism responsible for the red light emission is in good agreement with the deep-acceptor model of nitrogen defects, clarifying that nitrogen atoms caused deep accepters in ZnO nanowires. Based on this model, the enhanced green emission from defects in nitrogen-doped samples (excited by 325 nm line) can be well explained by the increase of the concentration of activated oxygen vacancies resulting from the compensation of nitrogen deep acceptors. © 2011 American Institute of Physics.

AB - Nitrogen doping in ZnO nanowires was achieved through ammonia plasma treatment followed by thermal annealing. The strong dependence of the red light emission from the nanowires excited by 2.4 eV on the nitrogen concentration, suggests that the red light emission originates from nitrogen related defects. The mechanism responsible for the red light emission is in good agreement with the deep-acceptor model of nitrogen defects, clarifying that nitrogen atoms caused deep accepters in ZnO nanowires. Based on this model, the enhanced green emission from defects in nitrogen-doped samples (excited by 325 nm line) can be well explained by the increase of the concentration of activated oxygen vacancies resulting from the compensation of nitrogen deep acceptors. © 2011 American Institute of Physics.

UR - http://www.scopus.com/inward/record.url?scp=80053952732&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-80053952732&origin=recordpage

U2 - 10.1063/1.3647773

DO - 10.1063/1.3647773

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

M1 - 143112

ER -

Nitrogen deep accepters in ZnO nanowires induced by ammonia plasma

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