Nitrogen binding behavior in ZnO films with time-resolved cathodoluminescence

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalNot applicablepeer-review

11 Scopus Citations
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Author(s)

  • Y. F. Mei
  • Ricky K.Y. Fu
  • G. G. Siu
  • K. W. Wong
  • R. S. Wang
  • H. C. Ong

Detail(s)

Original languageEnglish
Pages (from-to)8131-8134
Journal / PublicationApplied Surface Science
Volume252
Issue number23
Publication statusPublished - 30 Sep 2006

Abstract

ZnO film with (1 0 0) orientation was produced on silicon substrate and doped with nitrogen using plasma immersion ion implantation. The effects due to N doping were investigated using cathodoluminescence (CL). In the heavily nitrogen-doped ZnO film, the intensity of ultraviolet (UV) band decreases and that of the visible band increases as a function of the electron bombardment cycle i.e. time. Based on the X-ray photoelectron spectroscopy (XPS) analysis, the unstable Zn{single bond}N bond is responsible for the CL behavior and the experimental results agree well with the first-principle calculation. Our work is helpful to our understanding of the role of p-type dopants in ZnO. © 2005 Elsevier B.V. All rights reserved.

Research Area(s)

  • Cathodoluminescence, Nitrogen binding, Photoelectron spectroscopy

Citation Format(s)

Nitrogen binding behavior in ZnO films with time-resolved cathodoluminescence. / Mei, Y. F.; Fu, Ricky K.Y.; Siu, G. G.; Wong, K. W.; Chu, Paul K.; Wang, R. S.; Ong, H. C.

In: Applied Surface Science, Vol. 252, No. 23, 30.09.2006, p. 8131-8134.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalNot applicablepeer-review