Nitrogen binding behavior in ZnO films with time-resolved cathodoluminescence

Y. F. Mei, Ricky K.Y. Fu, G. G. Siu, K. W. Wong, Paul K. Chu, R. S. Wang, H. C. Ong

    Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

    12 Citations (Scopus)

    Abstract

    ZnO film with (1 0 0) orientation was produced on silicon substrate and doped with nitrogen using plasma immersion ion implantation. The effects due to N doping were investigated using cathodoluminescence (CL). In the heavily nitrogen-doped ZnO film, the intensity of ultraviolet (UV) band decreases and that of the visible band increases as a function of the electron bombardment cycle i.e. time. Based on the X-ray photoelectron spectroscopy (XPS) analysis, the unstable Zn{single bond}N bond is responsible for the CL behavior and the experimental results agree well with the first-principle calculation. Our work is helpful to our understanding of the role of p-type dopants in ZnO. © 2005 Elsevier B.V. All rights reserved.
    Original languageEnglish
    Pages (from-to)8131-8134
    JournalApplied Surface Science
    Volume252
    Issue number23
    DOIs
    Publication statusPublished - 30 Sept 2006

    Research Keywords

    • Cathodoluminescence
    • Nitrogen binding
    • Photoelectron spectroscopy

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