Abstract
ZnO film with (1 0 0) orientation was produced on silicon substrate and doped with nitrogen using plasma immersion ion implantation. The effects due to N doping were investigated using cathodoluminescence (CL). In the heavily nitrogen-doped ZnO film, the intensity of ultraviolet (UV) band decreases and that of the visible band increases as a function of the electron bombardment cycle i.e. time. Based on the X-ray photoelectron spectroscopy (XPS) analysis, the unstable Zn{single bond}N bond is responsible for the CL behavior and the experimental results agree well with the first-principle calculation. Our work is helpful to our understanding of the role of p-type dopants in ZnO. © 2005 Elsevier B.V. All rights reserved.
Original language | English |
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Pages (from-to) | 8131-8134 |
Journal | Applied Surface Science |
Volume | 252 |
Issue number | 23 |
DOIs | |
Publication status | Published - 30 Sept 2006 |
Research Keywords
- Cathodoluminescence
- Nitrogen binding
- Photoelectron spectroscopy