Nitride-based concentrator solar cells grown on Si substrates

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • C. Y. Liu
  • C. C. Lai
  • J. H. Liao
  • L. C. Cheng
  • H. H. Liu
  • C. C. Chang
  • G. Y. Lee
  • J. I. Chyi
  • L. K. Yeh
  • T. Y. Chung
  • L. C. Huang
  • K. Y. Lai

Detail(s)

Original languageEnglish
Pages (from-to)54-58
Journal / PublicationSolar Energy Materials and Solar Cells
Volume117
Online published6 Jun 2013
Publication statusPublished - Oct 2013
Externally publishedYes

Abstract

InGaN/GaN multiple-quantum-well solar cells were grown on (111) Si substrates. AlN/AlGaN superlattice and self-assembly SixNy masking islands were employed to alleviate the material mismatches between Si and GaN. The devices were characterized under the illumination of AM 1.5 G with different solar concentrations. As the concentration ratios increased from 1-sun to 105-sun, energy conversion efficiency was enhanced by 25%, which was noticeably greater than the enhancement reported on sapphire substrates under similar solar concentrations. The result is attributed to the superior heat sinking of Si substrates. 

Research Area(s)

  • Concentrator, GaN, InGaN, Si substrates

Citation Format(s)

Nitride-based concentrator solar cells grown on Si substrates. / Liu, C. Y.; Lai, C. C.; Liao, J. H.; Cheng, L. C.; Liu, H. H.; Chang, C. C.; Lee, G. Y.; Chyi, J. I.; Yeh, L. K.; He, J. H.; Chung, T. Y.; Huang, L. C.; Lai, K. Y.

In: Solar Energy Materials and Solar Cells, Vol. 117, 10.2013, p. 54-58.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review