Nitride-based concentrator solar cells grown on Si substrates

C. Y. Liu; C. C. Lai; J. H. Liao; L. C. Cheng; H. H. Liu; C. C. Chang; G. Y. Lee; J. I. Chyi; L. K. Yeh; J. H. He; T. Y. Chung; L. C. Huang; K. Y. Lai

doi:10.1016/j.solmat.2013.05.017

Nitride-based concentrator solar cells grown on Si substrates

C. Y. Liu
, C. C. Lai
, J. H. Liao
, L. C. Cheng
, H. H. Liu
, C. C. Chang
, G. Y. Lee
, J. I. Chyi
, L. K. Yeh
, J. H. He
, T. Y. Chung
, L. C. Huang
, K. Y. Lai^*

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

17 Citations (Scopus)

Abstract

InGaN/GaN multiple-quantum-well solar cells were grown on (111) Si substrates. AlN/AlGaN superlattice and self-assembly Si_xN_y masking islands were employed to alleviate the material mismatches between Si and GaN. The devices were characterized under the illumination of AM 1.5 G with different solar concentrations. As the concentration ratios increased from 1-sun to 105-sun, energy conversion efficiency was enhanced by 25%, which was noticeably greater than the enhancement reported on sapphire substrates under similar solar concentrations. The result is attributed to the superior heat sinking of Si substrates.

Original language	English
Pages (from-to)	54-58
Journal	Solar Energy Materials and Solar Cells
Volume	117
Online published	6 Jun 2013
DOIs	https://doi.org/10.1016/j.solmat.2013.05.017
Publication status	Published - Oct 2013
Externally published	Yes

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Research Keywords

Concentrator
GaN
InGaN
Si substrates

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10.1016/j.solmat.2013.05.017

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@article{d07a793e517447669cace60f21f3b37a,

title = "Nitride-based concentrator solar cells grown on Si substrates",

abstract = "InGaN/GaN multiple-quantum-well solar cells were grown on (111) Si substrates. AlN/AlGaN superlattice and self-assembly SixNy masking islands were employed to alleviate the material mismatches between Si and GaN. The devices were characterized under the illumination of AM 1.5 G with different solar concentrations. As the concentration ratios increased from 1-sun to 105-sun, energy conversion efficiency was enhanced by 25\%, which was noticeably greater than the enhancement reported on sapphire substrates under similar solar concentrations. The result is attributed to the superior heat sinking of Si substrates. ",

keywords = "Concentrator, GaN, InGaN, Si substrates",

author = "Liu, \{C. Y.\} and Lai, \{C. C.\} and Liao, \{J. H.\} and Cheng, \{L. C.\} and Liu, \{H. H.\} and Chang, \{C. C.\} and Lee, \{G. Y.\} and Chyi, \{J. I.\} and Yeh, \{L. K.\} and He, \{J. H.\} and Chung, \{T. Y.\} and Huang, \{L. C.\} and Lai, \{K. Y.\}",

year = "2013",

month = oct,

doi = "10.1016/j.solmat.2013.05.017",

language = "English",

volume = "117",

pages = "54--58",

journal = "Solar Energy Materials and Solar Cells",

issn = "0927-0248",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Nitride-based concentrator solar cells grown on Si substrates

AU - Liu, C. Y.

AU - Lai, C. C.

AU - Liao, J. H.

AU - Cheng, L. C.

AU - Liu, H. H.

AU - Chang, C. C.

AU - Lee, G. Y.

AU - Chyi, J. I.

AU - Yeh, L. K.

AU - He, J. H.

AU - Chung, T. Y.

AU - Huang, L. C.

AU - Lai, K. Y.

PY - 2013/10

Y1 - 2013/10

N2 - InGaN/GaN multiple-quantum-well solar cells were grown on (111) Si substrates. AlN/AlGaN superlattice and self-assembly SixNy masking islands were employed to alleviate the material mismatches between Si and GaN. The devices were characterized under the illumination of AM 1.5 G with different solar concentrations. As the concentration ratios increased from 1-sun to 105-sun, energy conversion efficiency was enhanced by 25%, which was noticeably greater than the enhancement reported on sapphire substrates under similar solar concentrations. The result is attributed to the superior heat sinking of Si substrates.

AB - InGaN/GaN multiple-quantum-well solar cells were grown on (111) Si substrates. AlN/AlGaN superlattice and self-assembly SixNy masking islands were employed to alleviate the material mismatches between Si and GaN. The devices were characterized under the illumination of AM 1.5 G with different solar concentrations. As the concentration ratios increased from 1-sun to 105-sun, energy conversion efficiency was enhanced by 25%, which was noticeably greater than the enhancement reported on sapphire substrates under similar solar concentrations. The result is attributed to the superior heat sinking of Si substrates.

KW - Concentrator

KW - GaN

KW - InGaN

KW - Si substrates

UR - https://www.scopus.com/pages/publications/84878846003

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-84878846003&origin=recordpage

U2 - 10.1016/j.solmat.2013.05.017

DO - 10.1016/j.solmat.2013.05.017

M3 - RGC 21 - Publication in refereed journal

SN - 0927-0248

VL - 117

SP - 54

EP - 58

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

ER -

Nitride-based concentrator solar cells grown on Si substrates

Abstract

UN SDGs

Research Keywords

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