TY - JOUR
T1 - NiSi formation at the silicide/Si interface on the NiPt/Si system
AU - Ottaviani, G.
AU - Tu, K. N.
AU - Chu, W. K.
AU - Hung, L. S.
AU - Mayer, J. W.
N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].
PY - 1982
Y1 - 1982
N2 - Alloy films of NiPt were e-beam codeposited on n-type Si and annealed up to 700°C in a purified- He ambient furnace. Silicide formation was monitored using MeV4 He Rutherford backscattering and glancing-angle x-ray diffraction. At low temperatures (300-350°C), Ni segregates at the Si/ silicide interface and the first phases detected are NiSi and PtSi. At intermediate temperatures (400-500°C), there is further accumulation of Ni at the Si/silicide interface, and at later stages an incursion of Pt to the interface. The barrier height increase reflects the presence of Pt. At 700°C, the Ni and Pt redistribute to form a uniform ternary.
AB - Alloy films of NiPt were e-beam codeposited on n-type Si and annealed up to 700°C in a purified- He ambient furnace. Silicide formation was monitored using MeV4 He Rutherford backscattering and glancing-angle x-ray diffraction. At low temperatures (300-350°C), Ni segregates at the Si/ silicide interface and the first phases detected are NiSi and PtSi. At intermediate temperatures (400-500°C), there is further accumulation of Ni at the Si/silicide interface, and at later stages an incursion of Pt to the interface. The barrier height increase reflects the presence of Pt. At 700°C, the Ni and Pt redistribute to form a uniform ternary.
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U2 - 10.1063/1.331323
DO - 10.1063/1.331323
M3 - RGC 21 - Publication in refereed journal
SN - 0021-8979
VL - 53
SP - 4903
EP - 4906
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 7
ER -
