Nickel precipitation at nanocavities in separation by implantation of oxygen

Miao Zhang; Xuchu Zeng; Paul K. Chu; R. Scholz; Chenglu Lin

doi:10.1116/1.1288138

Nickel precipitation at nanocavities in separation by implantation of oxygen

Miao Zhang, Xuchu Zeng, Paul K. Chu, R. Scholz, Chenglu Lin

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

13 Citations (Scopus)

Abstract

The growth of nickel cavities and nickel precipitates in the nanocavity band was analyzed using the separation by implantation of oxygen (SIMOX) technique. Proton implantation and Ni implantation were used to generate the nanocavities. The silicon overlayer was transformed into amorphous equivalent by Rutherford backscattering technique. The cavities played an important role in the determination of microstructure and dislocation of the system.

Original language	English
Pages (from-to)	2249-2253
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	18
Issue number	5
DOIs	https://doi.org/10.1116/1.1288138
Publication status	Published - Sept 2000
Event	47th International Symposium: Vacuum, Thin Films, Surfaces/Interfaces, and Processing - Boston, USA Duration: 2 Oct 2000 → 6 Oct 2000

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title = "Nickel precipitation at nanocavities in separation by implantation of oxygen",

abstract = "The growth of nickel cavities and nickel precipitates in the nanocavity band was analyzed using the separation by implantation of oxygen (SIMOX) technique. Proton implantation and Ni implantation were used to generate the nanocavities. The silicon overlayer was transformed into amorphous equivalent by Rutherford backscattering technique. The cavities played an important role in the determination of microstructure and dislocation of the system.",

author = "Miao Zhang and Xuchu Zeng and Chu, {Paul K.} and R. Scholz and Chenglu Lin",

year = "2000",

month = sep,

doi = "10.1116/1.1288138",

language = "English",

volume = "18",

pages = "2249--2253",

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issn = "0734-2101",

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TY - JOUR

T1 - Nickel precipitation at nanocavities in separation by implantation of oxygen

AU - Zhang, Miao

AU - Zeng, Xuchu

AU - Chu, Paul K.

AU - Scholz, R.

AU - Lin, Chenglu

PY - 2000/9

Y1 - 2000/9

N2 - The growth of nickel cavities and nickel precipitates in the nanocavity band was analyzed using the separation by implantation of oxygen (SIMOX) technique. Proton implantation and Ni implantation were used to generate the nanocavities. The silicon overlayer was transformed into amorphous equivalent by Rutherford backscattering technique. The cavities played an important role in the determination of microstructure and dislocation of the system.

AB - The growth of nickel cavities and nickel precipitates in the nanocavity band was analyzed using the separation by implantation of oxygen (SIMOX) technique. Proton implantation and Ni implantation were used to generate the nanocavities. The silicon overlayer was transformed into amorphous equivalent by Rutherford backscattering technique. The cavities played an important role in the determination of microstructure and dislocation of the system.

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U2 - 10.1116/1.1288138

DO - 10.1116/1.1288138

M3 - RGC 21 - Publication in refereed journal

SN - 0734-2101

VL - 18

SP - 2249

EP - 2253

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 5

T2 - 47th International Symposium: Vacuum, Thin Films, Surfaces/Interfaces, and Processing

Y2 - 2 October 2000 through 6 October 2000

ER -

Nickel precipitation at nanocavities in separation by implantation of oxygen

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