Nickel displacement deposition of porous silicon with ultrahigh aspect ratio

Chengkun Xu; Xi Zhang; King-Ning Tu; Yahong Xie

doi:10.1149/1.2430690

Nickel displacement deposition of porous silicon with ultrahigh aspect ratio

Chengkun Xu^*
, Xi Zhang
, King-Ning Tu
, Yahong Xie

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

22 Citations (Scopus)

Abstract

Nickel displacement deposition into porous silicon with pores of aspect ratio as high as ∼200 has been experimentally studied. High degree of thickness uniformity of the plated nickel inside the pores has been achieved by controlling the plating bath chemistry and the reaction time. The deposited nickel displaces the Si that forms the porous skeleton allowing for continued mass transport of nickel ions toward the bottom and consequently uniform deposition inside the pores. High nickel concentration, low pH, and the use of inhibiting additive coumarin greatly shorten the time needed to achieve uniform deposition. © 2007 The Electrochemical Society.

Original language	English
Article number	D170
Journal	Journal of the Electrochemical Society
Volume	154
Issue number	3
Online published	19 Jan 2007
DOIs	https://doi.org/10.1149/1.2430690
Publication status	Published - Jan 2007
Externally published	Yes

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Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

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@article{e26d90da12354daa8fb3b66184325d08,

title = "Nickel displacement deposition of porous silicon with ultrahigh aspect ratio",

abstract = "Nickel displacement deposition into porous silicon with pores of aspect ratio as high as ∼200 has been experimentally studied. High degree of thickness uniformity of the plated nickel inside the pores has been achieved by controlling the plating bath chemistry and the reaction time. The deposited nickel displaces the Si that forms the porous skeleton allowing for continued mass transport of nickel ions toward the bottom and consequently uniform deposition inside the pores. High nickel concentration, low pH, and the use of inhibiting additive coumarin greatly shorten the time needed to achieve uniform deposition. {\textcopyright} 2007 The Electrochemical Society.",

author = "Chengkun Xu and Xi Zhang and King-Ning Tu and Yahong Xie",

note = "Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected]. ",

year = "2007",

month = jan,

doi = "10.1149/1.2430690",

language = "English",

volume = "154",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Institute of Physics",

number = "3",

}

TY - JOUR

T1 - Nickel displacement deposition of porous silicon with ultrahigh aspect ratio

AU - Xu, Chengkun

AU - Zhang, Xi

AU - Tu, King-Ning

AU - Xie, Yahong

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 2007/1

Y1 - 2007/1

N2 - Nickel displacement deposition into porous silicon with pores of aspect ratio as high as ∼200 has been experimentally studied. High degree of thickness uniformity of the plated nickel inside the pores has been achieved by controlling the plating bath chemistry and the reaction time. The deposited nickel displaces the Si that forms the porous skeleton allowing for continued mass transport of nickel ions toward the bottom and consequently uniform deposition inside the pores. High nickel concentration, low pH, and the use of inhibiting additive coumarin greatly shorten the time needed to achieve uniform deposition. © 2007 The Electrochemical Society.

AB - Nickel displacement deposition into porous silicon with pores of aspect ratio as high as ∼200 has been experimentally studied. High degree of thickness uniformity of the plated nickel inside the pores has been achieved by controlling the plating bath chemistry and the reaction time. The deposited nickel displaces the Si that forms the porous skeleton allowing for continued mass transport of nickel ions toward the bottom and consequently uniform deposition inside the pores. High nickel concentration, low pH, and the use of inhibiting additive coumarin greatly shorten the time needed to achieve uniform deposition. © 2007 The Electrochemical Society.

UR - https://www.scopus.com/pages/publications/33846987242

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-33846987242&origin=recordpage

U2 - 10.1149/1.2430690

DO - 10.1149/1.2430690

M3 - RGC 21 - Publication in refereed journal

SN - 0013-4651

VL - 154

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 3

M1 - D170

ER -

Nickel displacement deposition of porous silicon with ultrahigh aspect ratio

Abstract

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