Ni implantation-induced enhancement of the crystallisation of amorphous Si

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

  • Young-Woo Ok
  • Tae-Yeon Seong
  • Chel-Jong Choi
  • K. N. Tu

Detail(s)

Original languageEnglish
Pages (from-to)979-985
Journal / PublicationJournal of Materials Science: Materials in Electronics
Volume17
Issue number12
Online published1 Sept 2006
Publication statusPublished - Dec 2006
Externally publishedYes

Abstract

We report on the effect of Ni implantation on the crystallisation process of amorphous Si formed by ion implantation during excimer laser annealing. Scanning transmission electron microscopy and X-ray photoemission spectroscopy results show that NiSi2 precipitates are formed in the Si-Ni-implanted samples. It is shown that the Ni implantation results in the enhanced crystallisation of amorphous Si during laser annealing. The Si-Ni-implanted samples become epitaxial to the Si substrate at 600 mJ/cm2, while the Si-implanted samples produce epitaxial relationship at 800 mJ/cm2. Possible mechanisms by which implanted Ni atoms play a role are given to describe the enhanced crystallisation process of amorphous Si. © Springer Science+Business Media, LLC 2006.

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Citation Format(s)

Ni implantation-induced enhancement of the crystallisation of amorphous Si. / Ok, Young-Woo; Seong, Tae-Yeon; Choi, Chel-Jong et al.
In: Journal of Materials Science: Materials in Electronics, Vol. 17, No. 12, 12.2006, p. 979-985.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review