Ni implantation-induced enhancement of the crystallisation of amorphous Si

Young-Woo Ok; Tae-Yeon Seong; Chel-Jong Choi; K. N. Tu

doi:10.1007/s10854-006-9035-1

Ni implantation-induced enhancement of the crystallisation of amorphous Si

Young-Woo Ok
, Tae-Yeon Seong^*
, Chel-Jong Choi
, K. N. Tu

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

2 Citations (Scopus)

Abstract

We report on the effect of Ni implantation on the crystallisation process of amorphous Si formed by ion implantation during excimer laser annealing. Scanning transmission electron microscopy and X-ray photoemission spectroscopy results show that NiSi₂ precipitates are formed in the Si-Ni-implanted samples. It is shown that the Ni implantation results in the enhanced crystallisation of amorphous Si during laser annealing. The Si-Ni-implanted samples become epitaxial to the Si substrate at 600 mJ/cm², while the Si-implanted samples produce epitaxial relationship at 800 mJ/cm². Possible mechanisms by which implanted Ni atoms play a role are given to describe the enhanced crystallisation process of amorphous Si. © Springer Science+Business Media, LLC 2006.

Original language	English
Pages (from-to)	979-985
Journal	Journal of Materials Science: Materials in Electronics
Volume	17
Issue number	12
Online published	1 Sept 2006
DOIs	https://doi.org/10.1007/s10854-006-9035-1
Publication status	Published - Dec 2006
Externally published	Yes

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Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

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@article{cf848fedfe1545818b1f3196bb5f6963,

title = "Ni implantation-induced enhancement of the crystallisation of amorphous Si",

abstract = "We report on the effect of Ni implantation on the crystallisation process of amorphous Si formed by ion implantation during excimer laser annealing. Scanning transmission electron microscopy and X-ray photoemission spectroscopy results show that NiSi2 precipitates are formed in the Si-Ni-implanted samples. It is shown that the Ni implantation results in the enhanced crystallisation of amorphous Si during laser annealing. The Si-Ni-implanted samples become epitaxial to the Si substrate at 600 mJ/cm2, while the Si-implanted samples produce epitaxial relationship at 800 mJ/cm2. Possible mechanisms by which implanted Ni atoms play a role are given to describe the enhanced crystallisation process of amorphous Si. {\textcopyright} Springer Science+Business Media, LLC 2006.",

author = "Young-Woo Ok and Tae-Yeon Seong and Chel-Jong Choi and Tu, \{K. N.\}",

note = "Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].",

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doi = "10.1007/s10854-006-9035-1",

language = "English",

volume = "17",

pages = "979--985",

journal = "Journal of Materials Science: Materials in Electronics",

issn = "0957-4522",

publisher = "Springer New York",

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TY - JOUR

T1 - Ni implantation-induced enhancement of the crystallisation of amorphous Si

AU - Ok, Young-Woo

AU - Seong, Tae-Yeon

AU - Choi, Chel-Jong

AU - Tu, K. N.

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 2006/12

Y1 - 2006/12

N2 - We report on the effect of Ni implantation on the crystallisation process of amorphous Si formed by ion implantation during excimer laser annealing. Scanning transmission electron microscopy and X-ray photoemission spectroscopy results show that NiSi2 precipitates are formed in the Si-Ni-implanted samples. It is shown that the Ni implantation results in the enhanced crystallisation of amorphous Si during laser annealing. The Si-Ni-implanted samples become epitaxial to the Si substrate at 600 mJ/cm2, while the Si-implanted samples produce epitaxial relationship at 800 mJ/cm2. Possible mechanisms by which implanted Ni atoms play a role are given to describe the enhanced crystallisation process of amorphous Si. © Springer Science+Business Media, LLC 2006.

AB - We report on the effect of Ni implantation on the crystallisation process of amorphous Si formed by ion implantation during excimer laser annealing. Scanning transmission electron microscopy and X-ray photoemission spectroscopy results show that NiSi2 precipitates are formed in the Si-Ni-implanted samples. It is shown that the Ni implantation results in the enhanced crystallisation of amorphous Si during laser annealing. The Si-Ni-implanted samples become epitaxial to the Si substrate at 600 mJ/cm2, while the Si-implanted samples produce epitaxial relationship at 800 mJ/cm2. Possible mechanisms by which implanted Ni atoms play a role are given to describe the enhanced crystallisation process of amorphous Si. © Springer Science+Business Media, LLC 2006.

UR - https://www.scopus.com/pages/publications/33749389998

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-33749389998&origin=recordpage

U2 - 10.1007/s10854-006-9035-1

DO - 10.1007/s10854-006-9035-1

M3 - RGC 21 - Publication in refereed journal

SN - 0957-4522

VL - 17

SP - 979

EP - 985

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

IS - 12

ER -

Ni implantation-induced enhancement of the crystallisation of amorphous Si

Abstract

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