New design of anodic oxidation reactor for high-quality gate oxide preparation

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • T. F. Hung
  • H. Wong
  • Y. C. Cheng
  • C. K. Pun

Detail(s)

Original languageEnglish
Pages (from-to)3747-3750
Journal / PublicationJournal of the Electrochemical Society
Volume138
Issue number12
Publication statusPublished - Dec 1991

Abstract

This work reports a new structure of anodic oxidation apparatus which can be used for high quality oxide preparation. By implanting an additional anode, the current flux in the silicon is redistributed and a uniformity of 1.2% on an area of 4 cm3 is achieved. On the other hand, as the oxide thickness is a linear function of time and the growth rate is governed by anode current, the reproducible thickness of oxide film is well defined. When pure D.L. water is used as the electrolyte, the interface state density and the oxide charge density of the anodic oxides are extremely low. In addition, the breakdown field can be as high as 13 MV/cm for 400 A pure water anodic oxide (WAO). Although the refractive index of the WAO is smaller than the conventional growth thermal oxide, the parameter can be upgraded to the thermal oxide levels when the samples are annealed in nitrogen at 700°C for 1 h.

Citation Format(s)

New design of anodic oxidation reactor for high-quality gate oxide preparation. / Hung, T. F.; Wong, H.; Cheng, Y. C.; Pun, C. K.

In: Journal of the Electrochemical Society, Vol. 138, No. 12, 12.1991, p. 3747-3750.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review