New CVD source reagents for osmium thin film deposition

Huan-Li Yu; Yun Chi; Chao-Shiuan Liu; Shie-Ming Peng; Gene-Hsiang Lee

doi:10.1002/1521-3862(200111)7:6<245::AID-CVDE245>3.0.CO;2-Y

New CVD source reagents for osmium thin film deposition

Huan-Li Yu
, Yun Chi
, Chao-Shiuan Liu
, Shie-Ming Peng
, Gene-Hsiang Lee

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

21 Citations (Scopus)

Abstract

High‐purity osmium film deposition is reportedfrom two volatile osmium complexes cis‐Os(CO)₄I₂ and fac‐Os(CO)₃(hfac)(trifluoroacetate). SEM analysis of films grown from cis‐Os(CO)₄I₂ at 450 °C shows snowflake type microcrystalline grains, which change at a higher deposition temperature of 550 °C to a closely packed microcrystalline grain structure (see Figure), with a preferred orientation along the (100) planes.

Original language	English
Pages (from-to)	245-248
Journal	Chemical Vapor Deposition
Volume	7
Issue number	6
Online published	5 Oct 2001
DOIs	https://doi.org/10.1002/1521-3862(200111)7:6<245::AID-CVDE245>3.0.CO;2-Y
Publication status	Published - Nov 2001
Externally published	Yes

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title = "New CVD source reagents for osmium thin film deposition",

abstract = "High‐purity osmium film deposition is reportedfrom two volatile osmium complexes cis‐Os(CO)4I2 and fac‐Os(CO)3(hfac)(trifluoroacetate). SEM analysis of films grown from cis‐Os(CO)4I2 at 450 °C shows snowflake type microcrystalline grains, which change at a higher deposition temperature of 550 °C to a closely packed microcrystalline grain structure (see Figure), with a preferred orientation along the (100) planes.",

author = "Huan-Li Yu and Yun Chi and Chao-Shiuan Liu and Shie-Ming Peng and Gene-Hsiang Lee",

year = "2001",

month = nov,

doi = "10.1002/1521-3862(200111)7:6<245::AID-CVDE245>3.0.CO;2-Y",

language = "English",

volume = "7",

pages = "245--248",

journal = "Chemical Vapor Deposition",

issn = "0948-1907",

publisher = "Wiley-VCH Verlag GmbH",

number = "6",

}

TY - JOUR

T1 - New CVD source reagents for osmium thin film deposition

AU - Yu, Huan-Li

AU - Chi, Yun

AU - Liu, Chao-Shiuan

AU - Peng, Shie-Ming

AU - Lee, Gene-Hsiang

PY - 2001/11

Y1 - 2001/11

N2 - High‐purity osmium film deposition is reportedfrom two volatile osmium complexes cis‐Os(CO)4I2 and fac‐Os(CO)3(hfac)(trifluoroacetate). SEM analysis of films grown from cis‐Os(CO)4I2 at 450 °C shows snowflake type microcrystalline grains, which change at a higher deposition temperature of 550 °C to a closely packed microcrystalline grain structure (see Figure), with a preferred orientation along the (100) planes.

AB - High‐purity osmium film deposition is reportedfrom two volatile osmium complexes cis‐Os(CO)4I2 and fac‐Os(CO)3(hfac)(trifluoroacetate). SEM analysis of films grown from cis‐Os(CO)4I2 at 450 °C shows snowflake type microcrystalline grains, which change at a higher deposition temperature of 550 °C to a closely packed microcrystalline grain structure (see Figure), with a preferred orientation along the (100) planes.

UR - https://www.scopus.com/pages/publications/0001503617

UR - https://www.scopus.com/pages/publications/0001503617#tab=impact

U2 - 10.1002/1521-3862(200111)7:6<245::AID-CVDE245>3.0.CO;2-Y

DO - 10.1002/1521-3862(200111)7:6<245::AID-CVDE245>3.0.CO;2-Y

M3 - RGC 21 - Publication in refereed journal

SN - 0948-1907

VL - 7

SP - 245

EP - 248

JO - Chemical Vapor Deposition

JF - Chemical Vapor Deposition

IS - 6

ER -

New CVD source reagents for osmium thin film deposition

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