New CVD Precursors Capable of Depositing Copper Metal under Mixed O2/Ar Atmosphere
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Detail(s)
Original language | English |
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Pages (from-to) | 7226-7233 |
Journal / Publication | Inorganic Chemistry |
Volume | 44 |
Issue number | 20 |
Publication status | Published - 3 Oct 2005 |
Externally published | Yes |
Link(s)
Abstract
Volatile low-melting CuII metal complexes Cu[OC(CF3)2CH2C(Me)NMe]2 (4) and Cu[OC(CF3)2CH2CHMeNHMe]2 (5) were synthesized and characterized by spectroscopic methods. A single-crystal X-ray diffraction study on complex 4 shows the anticipated N2O2 square-planar geometry with the imino alcoholate ligand arranged in the all-trans orientation. In contrast, a highly distorted N2O2 geometry with a dihedral angle of 33° was observed for complex 5, suggesting that the fully saturated amino alcoholate ligand produces a much greater steric congestion around the metal ion. Metal CVD experiments were conducted, showing that both complexes, 4 and 5, are capable of depositing copper metal at temperatures of 275−300 °C using an inert argon carrier gas mixed with low concentrations (2−8%) of O2. The best copper thin film showed a purity of ∼96 at. % and a resistivity of 2.11 μΩ cm versus that of the bulk standard (1.7 μΩ cm), as revealed by XPS and four-point probe analyses, respectively. We speculate that the low concentration of O2 promotes partial ligand oxidation, thus releasing the reduced copper on the substrate and affording the high-purity copper deposit.
Citation Format(s)
New CVD Precursors Capable of Depositing Copper Metal under Mixed O2/Ar Atmosphere. / Lay, Eddy; Song, Yi-Hwa; Chiu, Yuan-Chieh et al.
In: Inorganic Chemistry, Vol. 44, No. 20, 03.10.2005, p. 7226-7233.
In: Inorganic Chemistry, Vol. 44, No. 20, 03.10.2005, p. 7226-7233.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review