New aspects of (semi-insulating) GaP : Cu

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

  • C. Eder
  • V. Schlosser
  • R. P. Leon
  • K. M. Yu
  • E. R. Weber

Detail(s)

Original languageEnglish
Pages (from-to)329-334
Journal / PublicationMaterials Science Forum
Volume143-4
Issue numberpt 1
Publication statusPublished - 1994
Externally publishedYes

Conference

TitleProceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3)
CityGmunden, Austria
Period18 - 23 July 1993

Abstract

Experiments were performed to investigate the possible relevance of the buried Schottky contact model for the complex behavior of Cu in GaP. PIXE studies show that Cu can reach very high concentrations in that material. Channeling indicates that a part of the Cu forms precipitates. Hall measurements on sets of samples were made to examine the electrical transport coefficients. The mobilities of the samples with the most abundant concentration of Cu were found to be dominated by a term ∝T-0.5 which was identified as a component induced by metallic spikes with non-overlapping depletion zones. We come to the conclusion that Cu introduces an acceptor like defect as well as precipitates. For high initial carrier concentrations, however, the depletion widths are probably too small for the buried Schottky contact model to apply. For doping concentrations lower than 5×1016 cm-3 the model might be of considerable relevance.

Citation Format(s)

New aspects of (semi-insulating) GaP: Cu. / Eder, C.; Schlosser, V.; Leon, R. P. et al.
In: Materials Science Forum, Vol. 143-4, No. pt 1, 1994, p. 329-334.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review