Negative-resistance, reflection-type bipolar frequency doubler

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Detail(s)

Original languageEnglish
Pages (from-to)434-436
Journal / PublicationMicrowave and Optical Technology Letters
Volume49
Issue number2
Publication statusPublished - Feb 2007

Abstract

A new method is presented for frequency doubler design by operating bipolar transistor as negative-resistance two-terminal device. In the proposed design, frequency doubler's input and output ports (I/O) are both located in the base-emitter side of bipolar transistor in a reflection manner. Whereas the conventional transmission-type frequency doublers have their I/O connected to the base-emitter and collector-emitter pans, respectively. Resembling reflection-type amplifier configuration, the new doubler features high reflection conversion gain (more than 3 dB) and low phase noise degradation (only 2.2 dB). © 2006 Wiley Periodicals, Inc.

Research Area(s)

  • Frequency doubler, Negative-resistance, Phase noise, Reflection gain, Reflection-type

Citation Format(s)

Negative-resistance, reflection-type bipolar frequency doubler. / Lau, Yeung-Fan; Xue, Quan; Chan, Chi-Hou; Xia, Ming-Yao.

In: Microwave and Optical Technology Letters, Vol. 49, No. 2, 02.2007, p. 434-436.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review