Negative-resistance, reflection-type bipolar frequency doubler

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

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Detail(s)

Original languageEnglish
Pages (from-to)434-436
Journal / PublicationMicrowave and Optical Technology Letters
Volume49
Issue number2
Publication statusPublished - Feb 2007

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DOI

DOI
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Link to Scopus https://www.scopus.com/record/display.uri?eid=2-s2.0-33846626538&origin=recordpage
Permanent Link https://scholars.cityu.edu.hk/en/publications/publication(1b613f06-8620-4388-ae37-509e8b988d1b).html

Abstract

A new method is presented for frequency doubler design by operating bipolar transistor as negative-resistance two-terminal device. In the proposed design, frequency doubler's input and output ports (I/O) are both located in the base-emitter side of bipolar transistor in a reflection manner. Whereas the conventional transmission-type frequency doublers have their I/O connected to the base-emitter and collector-emitter pans, respectively. Resembling reflection-type amplifier configuration, the new doubler features high reflection conversion gain (more than 3 dB) and low phase noise degradation (only 2.2 dB). © 2006 Wiley Periodicals, Inc.

Research Area(s)

  • Frequency doubler, Negative-resistance, Phase noise, Reflection gain, Reflection-type

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Publication fingerprints text

100
Bipolar Transistor Engineering
100
Bipolar Type Engineering
50
Amplifier Engineering
50
Output Port Engineering
50
Phase Noise Engineering
50
Input Port Engineering
50
Conversion Gain Engineering
50
Emitter Side Engineering
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Citation Format(s)

[ RIS ] [ BibTeX ]
Negative-resistance, reflection-type bipolar frequency doubler. / Lau, Yeung-Fan; Xue, Quan; Chan, Chi-Hou et al.
In: Microwave and Optical Technology Letters, Vol. 49, No. 2, 02.2007, p. 434-436.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review