Near-Infrared Polarimetric Image Sensors Based on Ordered Sulfur-Passivation GaSb Nanowire Arrays

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Kai Zhang
  • Zhihui Ren
  • Huichen Cao
  • Lingling Li
  • Ying Wang
  • Wei Zhang
  • Yubao Li
  • Haitao Yang
  • Zhongming Wei
  • Guozhen Shen

Detail(s)

Original languageEnglish
Pages (from-to)8128–8140
Journal / PublicationACS Nano
Volume16
Issue number5
Online published5 May 2022
Publication statusPublished - 24 May 2022

Abstract

The near-infrared polarimetric image sensor has a wide range of applications in the military and civilian fields, thus developing into a research hotspot in recent years. Because of their distinguishing 1D structure features, the ordered GaSb nanowire (NW) arrays possess potential applications for near-infrared polarization photodetection. In this work, single-crystalline GaSb NWs are synthesized through a sulfur-catalyzed chemical vapor deposition process. A sulfur-passivation thin layer is formed on the NW surface, which prevents the GaSb NW core from being oxidized. The photodetector based on sulfur-passivation GaSb (S-GaSb) NWs has a lower dark current and higher responsivity than that built with pure GaSb NWs. The photodetector exhibits a large responsivity of 9.39 × 102 A/W and an ultrahigh detectivity of 1.10 × 1011 Jones for 1.55 μm incident light. Furthermore, the dichroic ratio of the device is measured to reach 2.65 for polarized 1.55 μm light. Through a COMSOL simulation, it is elucidated that the origin of the polarized photoresponse is the attenuation of a light electric field inside the NW when the angle of incident polarization light rotates. Moreover, a flexible polarimetric image sensor with 5 × 5 pixels is successfully constructed on the ordered S-GaSb NW arrays, and it exhibits a good imaging ability for incident near-infrared polarization light. These good photoresponse properties and polarized imaging abilities can empower ordered S-GaSb NW arrays with technological potentials in next-generation large-scale near-infrared polarimetric imaging sensors.

Research Area(s)

  • GaSb, imaging sensor, nanowire arrays, polarized photodetector, sulfur-passivation

Citation Format(s)

Near-Infrared Polarimetric Image Sensors Based on Ordered Sulfur-Passivation GaSb Nanowire Arrays. / Zhang, Kai; Ren, Zhihui; Cao, Huichen; Li, Lingling; Wang, Ying; Zhang, Wei; Li, Yubao; Yang, Haitao; Meng, You; Ho, Johnny C.; Wei, Zhongming; Shen, Guozhen.

In: ACS Nano, Vol. 16, No. 5, 24.05.2022, p. 8128–8140.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review