Near-stoichiometric Ti: LiNbO3 strip waveguides fabricated by standard Ti diffusion and post-VTE

De-Long Zhang; Ping-Rang Hua; Edwin Yue-Bun Pun

doi:10.1109/LPT.2009.2031246

Near-stoichiometric Ti: LiNbO₃ strip waveguides fabricated by standard Ti diffusion and post-VTE

De-Long Zhang, Ping-Rang Hua, Edwin Yue-Bun Pun

Department of Electrical Engineering

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

9 Citations (Scopus)

Abstract

We report near-stoichiometric (NS) Ti: LiNbO₃ waveguides fabricated by indiffusion of 4-, 5-, 6-, 7-μm-wide 120-nm-thick Ti-strips at 1060 °C for 10 h into a congruent LiNbO₃ (i.e., standard Ti diffusion procedure) and post-vapour-transport-equilibration (VTE) treatment at 1100 °C for 5 h. These waveguides are NS and single-mode at 1.5 μm, and have a loss of 1.0/0.8 dB/cm for the TM/TE mode. In the width/depth direction of the waveguide, the mode field follows a Gauss/Hermite-Gauss profile, and the Ti profile follows a sum of two error functions/a Gauss function. The post-VTE resulted in increase of diffusion width/depth by 2.0/1.0 μm. A two-dimensional refractive index profile in the guiding layer is suggested. © 2009 IEEE.

Original language	English
Pages (from-to)	1665-1667
Journal	IEEE Photonics Technology Letters
Volume	21
Issue number	22
DOIs	https://doi.org/10.1109/LPT.2009.2031246
Publication status	Published - 15 Nov 2009

Research Keywords

Near-stoichiometric (NS) Ti: LiNbO3 waveguide
Post-vapor-transport-equilibration (VTE)
Refractive index profile

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10.1109/LPT.2009.2031246

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Cite this

@article{be742a92f0a148da93467f0bec5a0e5f,

title = "Near-stoichiometric Ti: LiNbO3 strip waveguides fabricated by standard Ti diffusion and post-VTE",

abstract = "We report near-stoichiometric (NS) Ti: LiNbO3 waveguides fabricated by indiffusion of 4-, 5-, 6-, 7-μm-wide 120-nm-thick Ti-strips at 1060 °C for 10 h into a congruent LiNbO3 (i.e., standard Ti diffusion procedure) and post-vapour-transport-equilibration (VTE) treatment at 1100 °C for 5 h. These waveguides are NS and single-mode at 1.5 μm, and have a loss of 1.0/0.8 dB/cm for the TM/TE mode. In the width/depth direction of the waveguide, the mode field follows a Gauss/Hermite-Gauss profile, and the Ti profile follows a sum of two error functions/a Gauss function. The post-VTE resulted in increase of diffusion width/depth by 2.0/1.0 μm. A two-dimensional refractive index profile in the guiding layer is suggested. {\textcopyright} 2009 IEEE.",

keywords = "Near-stoichiometric (NS) Ti: LiNbO3 waveguide, Post-vapor-transport-equilibration (VTE), Refractive index profile",

author = "De-Long Zhang and Ping-Rang Hua and Pun, {Edwin Yue-Bun}",

year = "2009",

month = nov,

day = "15",

doi = "10.1109/LPT.2009.2031246",

language = "English",

volume = "21",

pages = "1665--1667",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "IEEE",

number = "22",

}

TY - JOUR

T1 - Near-stoichiometric Ti

T2 - LiNbO3 strip waveguides fabricated by standard Ti diffusion and post-VTE

AU - Zhang, De-Long

AU - Hua, Ping-Rang

AU - Pun, Edwin Yue-Bun

PY - 2009/11/15

Y1 - 2009/11/15

N2 - We report near-stoichiometric (NS) Ti: LiNbO3 waveguides fabricated by indiffusion of 4-, 5-, 6-, 7-μm-wide 120-nm-thick Ti-strips at 1060 °C for 10 h into a congruent LiNbO3 (i.e., standard Ti diffusion procedure) and post-vapour-transport-equilibration (VTE) treatment at 1100 °C for 5 h. These waveguides are NS and single-mode at 1.5 μm, and have a loss of 1.0/0.8 dB/cm for the TM/TE mode. In the width/depth direction of the waveguide, the mode field follows a Gauss/Hermite-Gauss profile, and the Ti profile follows a sum of two error functions/a Gauss function. The post-VTE resulted in increase of diffusion width/depth by 2.0/1.0 μm. A two-dimensional refractive index profile in the guiding layer is suggested. © 2009 IEEE.

AB - We report near-stoichiometric (NS) Ti: LiNbO3 waveguides fabricated by indiffusion of 4-, 5-, 6-, 7-μm-wide 120-nm-thick Ti-strips at 1060 °C for 10 h into a congruent LiNbO3 (i.e., standard Ti diffusion procedure) and post-vapour-transport-equilibration (VTE) treatment at 1100 °C for 5 h. These waveguides are NS and single-mode at 1.5 μm, and have a loss of 1.0/0.8 dB/cm for the TM/TE mode. In the width/depth direction of the waveguide, the mode field follows a Gauss/Hermite-Gauss profile, and the Ti profile follows a sum of two error functions/a Gauss function. The post-VTE resulted in increase of diffusion width/depth by 2.0/1.0 μm. A two-dimensional refractive index profile in the guiding layer is suggested. © 2009 IEEE.

KW - Near-stoichiometric (NS) Ti: LiNbO3 waveguide

KW - Post-vapor-transport-equilibration (VTE)

KW - Refractive index profile

UR - http://www.scopus.com/inward/record.url?scp=70350738529&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-70350738529&origin=recordpage

U2 - 10.1109/LPT.2009.2031246

DO - 10.1109/LPT.2009.2031246

M3 - RGC 21 - Publication in refereed journal

SN - 1041-1135

VL - 21

SP - 1665

EP - 1667

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 22

ER -