Nature of the fundamental band gap in GaNxP1-x alloys

W. Shan; W. Walukiewicz; K. M. Yu; J. Wu; J. W. Ager III; E. E. Haller; H. P. Xin; C. W. Tu

doi:10.1063/1.126597

Nature of the fundamental band gap in GaNxP1-x alloys

W. Shan^*, W. Walukiewicz, K. M. Yu, J. Wu, J. W. Ager III, E. E. Haller, H. P. Xin, C. W. Tu

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

245 Citations (Scopus)

Abstract

The optical properties of GaN_xPi_1-x alloys (0.007≤x≤0.031) grown by gas-source molecular-beam epitaxy have been studied. An absorption edge appears in GaN_xP_1-x at energy below the indirect Γ_V-X_C transition in GaP, and the absorption edge shifts to lower energy with increasing N concentration. Strong photomodulution signals associated with the absorption edges in GaN_xP_1-x indicate that a direct fundamental optical transition is taking place, revealing that the fundamental band gap has changed from indirect to direct. This N-induced transformation from indirect to direct band gap is explained in terms of an interaction between the highly localized nitrogen states and the extended states at the Γ conduction-band minimum. © 2000 American Institute of Physics.

Original language	English
Pages (from-to)	3251-3253
Journal	Applied Physics Letters
Volume	76
Issue number	22
DOIs	https://doi.org/10.1063/1.126597
Publication status	Published - 29 May 2000
Externally published	Yes

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title = "Nature of the fundamental band gap in GaNxP1-x alloys",

abstract = "The optical properties of GaNxPi1-x alloys (0.007≤x≤0.031) grown by gas-source molecular-beam epitaxy have been studied. An absorption edge appears in GaNxP1-x at energy below the indirect ΓV-XC transition in GaP, and the absorption edge shifts to lower energy with increasing N concentration. Strong photomodulution signals associated with the absorption edges in GaNxP1-x indicate that a direct fundamental optical transition is taking place, revealing that the fundamental band gap has changed from indirect to direct. This N-induced transformation from indirect to direct band gap is explained in terms of an interaction between the highly localized nitrogen states and the extended states at the Γ conduction-band minimum. {\textcopyright} 2000 American Institute of Physics.",

author = "W. Shan and W. Walukiewicz and Yu, {K. M.} and J. Wu and {Ager III}, {J. W.} and Haller, {E. E.} and Xin, {H. P.} and Tu, {C. W.}",

year = "2000",

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doi = "10.1063/1.126597",

language = "English",

volume = "76",

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journal = "Applied Physics Letters",

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TY - JOUR

T1 - Nature of the fundamental band gap in GaNxP1-x alloys

AU - Shan, W.

AU - Walukiewicz, W.

AU - Yu, K. M.

AU - Wu, J.

AU - Ager III, J. W.

AU - Haller, E. E.

AU - Xin, H. P.

AU - Tu, C. W.

PY - 2000/5/29

Y1 - 2000/5/29

N2 - The optical properties of GaNxPi1-x alloys (0.007≤x≤0.031) grown by gas-source molecular-beam epitaxy have been studied. An absorption edge appears in GaNxP1-x at energy below the indirect ΓV-XC transition in GaP, and the absorption edge shifts to lower energy with increasing N concentration. Strong photomodulution signals associated with the absorption edges in GaNxP1-x indicate that a direct fundamental optical transition is taking place, revealing that the fundamental band gap has changed from indirect to direct. This N-induced transformation from indirect to direct band gap is explained in terms of an interaction between the highly localized nitrogen states and the extended states at the Γ conduction-band minimum. © 2000 American Institute of Physics.

AB - The optical properties of GaNxPi1-x alloys (0.007≤x≤0.031) grown by gas-source molecular-beam epitaxy have been studied. An absorption edge appears in GaNxP1-x at energy below the indirect ΓV-XC transition in GaP, and the absorption edge shifts to lower energy with increasing N concentration. Strong photomodulution signals associated with the absorption edges in GaNxP1-x indicate that a direct fundamental optical transition is taking place, revealing that the fundamental band gap has changed from indirect to direct. This N-induced transformation from indirect to direct band gap is explained in terms of an interaction between the highly localized nitrogen states and the extended states at the Γ conduction-band minimum. © 2000 American Institute of Physics.

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U2 - 10.1063/1.126597

DO - 10.1063/1.126597

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 76

SP - 3251

EP - 3253

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

ER -

Nature of the fundamental band gap in GaNxP1-x alloys

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