Nature of quasi-LO phonon in ZnO

Y. Y. Tay; T. T. Tan; M. H. Liang; F. Boey; S. Li

doi:10.1063/1.2983656

Nature of quasi-LO phonon in ZnO

Y. Y. Tay
, T. T. Tan
, M. H. Liang
, F. Boey
, S. Li^*

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

23 Citations (Scopus)

Abstract

The quasi-LO phonon mode is related to the specific defects that strongly affect the photonic properties of materials such as zinc oxide (ZnO). The line shapes of the quasi-LO phonon of ZnO annealed in different environments have been investigated. The experimental results show that this mode has the greatest Raman shift to lower wavenumber for the ZnO annealed in ambient atmosphere, suggesting that it has the largest concentration of defects that may be related to its green emission. © 2008 American Institute of Physics.

Original language	English
Article number	111903
Journal	Applied Physics Letters
Volume	93
Issue number	11
DOIs	https://doi.org/10.1063/1.2983656
Publication status	Published - 15 Sept 2008
Externally published	Yes

Funding

One of the authors Y.Y.T. would like to thank Singapore Millennium Foundation SMF for the scholarship. This work is financially supported by Australian Research Council Discovery Program Grant No. DP665539.

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Nature of quasi-LO phonon in ZnO

Abstract

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