TY - JOUR
T1 - Nature of defects and gap states in GeTe model phase change materials
AU - Huang, B.
AU - Robertson, J.
N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].
PY - 2012/3/13
Y1 - 2012/3/13
N2 - The electrical storage mechanism in GeSbTe phase change materials is discussed in terms of their gap states using GeTe as a model system. The lowest energy defect in crystalline rhombohedral GeTe phase is the Ge vacancy, because it reconstructs along the resonant bonding directions. The lowest energy in amorphous GeTe is the divalent Te atom, which creates overlapping band-tail states that pin Fermi level E F near midgap. In contrast, the lowest cost defect in disordered phase in GeSbTe superlattices is the Te interstitial whose negative correlation energy pins E F near midgap. © 2012 American Physical Society.
AB - The electrical storage mechanism in GeSbTe phase change materials is discussed in terms of their gap states using GeTe as a model system. The lowest energy defect in crystalline rhombohedral GeTe phase is the Ge vacancy, because it reconstructs along the resonant bonding directions. The lowest energy in amorphous GeTe is the divalent Te atom, which creates overlapping band-tail states that pin Fermi level E F near midgap. In contrast, the lowest cost defect in disordered phase in GeSbTe superlattices is the Te interstitial whose negative correlation energy pins E F near midgap. © 2012 American Physical Society.
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U2 - 10.1103/PhysRevB.85.125305
DO - 10.1103/PhysRevB.85.125305
M3 - RGC 21 - Publication in refereed journal
SN - 1098-0121
VL - 85
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 12
M1 - 125305
ER -