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Natural Superlattice 2D Materials-based Volatile Memristor Promotes Artificial Nociceptor

  • Yongyue Xiao (Co-first Author)
  • , Li Yang (Co-first Author)
  • , Yuanduo Qu
  • , Shuai Zhang
  • , Shanwu Ke
  • , Chan Ke
  • , Yang Li*
  • , Mengdi Hao
  • , Chen Wang
  • , Pan Xue
  • , Zhenyu Zhang
  • , Hao Huang
  • , Yanliang Liu
  • , Ziqiang Cheng*
  • , Cong Ye*
  • , Paul K. Chu
  • , Xue-Feng Yu
  • , Jiahong Wang*
  • *Corresponding author for this work

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

Abstract

Memristors show promise in neuromorphic computing because of their resistive switching properties and memory functions. The integration of high-performance memristor devices with sensors offers an effective pathway toward energy-efficient edge-computing systems. Herein, using the natural superlattice 2D material of BiTiS3 composed of alternating BiS and TiS2 sublayers, a volatile memristor with a low operating voltage is designed and demonstrated. The lattice distortion and sulfur vacancies in BiTiS3 enhance ion migration and filament formation, as verified by conductive atomic force microscopy and X-ray photoelectron spectroscopy. This defect-induced enhancement of ion transport promotes the rapid formation and dissolution of conductive filaments, thereby implementing the memristors’ volatile switching behavior. The nociceptive functions, such as pain hypersensitivity and allodynia, are mimicked. This biomimetic nociceptor system effectively emulates the biological pain response pathways, converts physical stimuli into electrical signals, and generates the appropriate neural-like outputs. Our results highlight the potential of memristors in bioinspired electronics and reveal a new strategy for intelligent bionic devices and artificial sensing systems. © 2026 Wiley-VCH GmbH.
Original languageEnglish
Article numbere14931
Number of pages12
JournalSmall
Online published20 Mar 2026
DOIs
Publication statusOnline published - 20 Mar 2026

Funding

The work was supported by the National Key R&D Program ofChina (No. 2024YFB3614200), National Natural Science Foundation ofChina (Nos. 62365010 and 62274058), Guangdong Basic and AppliedBasic Research Foundation (Nos. 2023A1515110590, 2024A1515030176 and2025B1515020088), Jiangxi Provincial Cultivation Program for Academicand Technical Leaders of Major Disciplines (No. 20232BCJ23011), Shen-zhen Science and Technology Program (No. JCYJ20220818100806014),Guangdong Provincial Key Laboratory of Multimodality Non-InvasiveBrain-Computer Interfaces (No. 2024B1212010010) and City Universityof Hong Kong Donation Research Grants (Nos. DON-RMG 9229021and 9220061). The authors gratefully acknowledge Dr. Zhaolong Liu forassistance with materials characterization.

Research Keywords

  • 2D materials
  • artificial nociceptor
  • memristors
  • natural superlattice materials
  • volatile

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