Native defects in InxGa1-xN alloys

S. X. Li; K. M. Yu; J. Wu; R. E. Jones; W. Walukiewicz; J. W. Ager III; W. Shan; E. E. Haller; Hai Lu; William J. Schaff

doi:10.1016/j.physb.2005.12.111

Native defects in InxGa1-xN alloys

S. X. Li
, K. M. Yu
, J. Wu
, R. E. Jones
, W. Walukiewicz^*
, J. W. Ager III
, W. Shan
, E. E. Haller
, Hai Lu
, William J. Schaff

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

11 Citations (Scopus)

Abstract

To elucidate the role of native defects in determining the electronic and optical properties of In_1-xGa_xN, energetic particle irradiation (electrons, protons, and ⁴He⁺) has been used to intentionally introduce point defects into In_xGa _1-xN alloys. Optical absorption, Hall effect, and capacitance-voltage (CV) measurements are used to evaluate properties of these materials. Irradiation produces donor-like defects in In_xGa _1-xN with x>0.34, while acceptor-like defects form in Ga-rich In_xGa_1-xN (xFS), as predicted by the amphoteric defect model. Pinning of the Fermi level at this energy is also responsible for the surface electron accumulation effect in unirradiated In-rich In_1-xGa _xN.

Original language	English
Pages (from-to)	432-435
Journal	Physica B: Condensed Matter
Volume	376-377
Issue number	1
DOIs	https://doi.org/10.1016/j.physb.2005.12.111
Publication status	Published - 1 Apr 2006
Externally published	Yes
Event	Proceedings of the 23rd International Conference on Defects in Semiconductors - Duration: 24 Jul 2005 → 29 Jul 2005

Research Keywords

Fermi stabilization energy
InGaN
InN
Native defects

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@article{571e786f8032490bb05743bc88a2fb92,

title = "Native defects in InxGa1-xN alloys",

abstract = "To elucidate the role of native defects in determining the electronic and optical properties of In1-xGaxN, energetic particle irradiation (electrons, protons, and 4He+) has been used to intentionally introduce point defects into InxGa 1-xN alloys. Optical absorption, Hall effect, and capacitance-voltage (CV) measurements are used to evaluate properties of these materials. Irradiation produces donor-like defects in InxGa 1-xN with x>0.34, while acceptor-like defects form in Ga-rich InxGa1-xN (xFS), as predicted by the amphoteric defect model. Pinning of the Fermi level at this energy is also responsible for the surface electron accumulation effect in unirradiated In-rich In1-xGa xN.",

keywords = "Fermi stabilization energy, InGaN, InN, Native defects",

author = "Li, \{S. X.\} and Yu, \{K. M.\} and J. Wu and Jones, \{R. E.\} and W. Walukiewicz and \{Ager III\}, \{J. W.\} and W. Shan and Haller, \{E. E.\} and Hai Lu and Schaff, \{William J.\}",

year = "2006",

month = apr,

day = "1",

doi = "10.1016/j.physb.2005.12.111",

language = "English",

volume = "376-377",

pages = "432--435",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier B.V.",

number = "1",

note = "Proceedings of the 23rd International Conference on Defects in Semiconductors ; Conference date: 24-07-2005 Through 29-07-2005",

}

TY - JOUR

T1 - Native defects in InxGa1-xN alloys

AU - Li, S. X.

AU - Yu, K. M.

AU - Wu, J.

AU - Jones, R. E.

AU - Walukiewicz, W.

AU - Ager III, J. W.

AU - Shan, W.

AU - Haller, E. E.

AU - Lu, Hai

AU - Schaff, William J.

PY - 2006/4/1

Y1 - 2006/4/1

N2 - To elucidate the role of native defects in determining the electronic and optical properties of In1-xGaxN, energetic particle irradiation (electrons, protons, and 4He+) has been used to intentionally introduce point defects into InxGa 1-xN alloys. Optical absorption, Hall effect, and capacitance-voltage (CV) measurements are used to evaluate properties of these materials. Irradiation produces donor-like defects in InxGa 1-xN with x>0.34, while acceptor-like defects form in Ga-rich InxGa1-xN (xFS), as predicted by the amphoteric defect model. Pinning of the Fermi level at this energy is also responsible for the surface electron accumulation effect in unirradiated In-rich In1-xGa xN.

AB - To elucidate the role of native defects in determining the electronic and optical properties of In1-xGaxN, energetic particle irradiation (electrons, protons, and 4He+) has been used to intentionally introduce point defects into InxGa 1-xN alloys. Optical absorption, Hall effect, and capacitance-voltage (CV) measurements are used to evaluate properties of these materials. Irradiation produces donor-like defects in InxGa 1-xN with x>0.34, while acceptor-like defects form in Ga-rich InxGa1-xN (xFS), as predicted by the amphoteric defect model. Pinning of the Fermi level at this energy is also responsible for the surface electron accumulation effect in unirradiated In-rich In1-xGa xN.

KW - Fermi stabilization energy

KW - InGaN

KW - InN

KW - Native defects

UR - https://www.scopus.com/pages/publications/33645132459

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-33645132459&origin=recordpage

U2 - 10.1016/j.physb.2005.12.111

DO - 10.1016/j.physb.2005.12.111

M3 - RGC 21 - Publication in refereed journal

SN - 0921-4526

VL - 376-377

SP - 432

EP - 435

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 1

T2 - Proceedings of the 23rd International Conference on Defects in Semiconductors

Y2 - 24 July 2005 through 29 July 2005

ER -

Native defects in InxGa1-xN alloys

Abstract

Research Keywords

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