Nanometric powder of stoichiometric silicon carbide produced in square-wave modulated RF glow discharges
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Author(s)
Detail(s)
Original language | English |
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Pages (from-to) | 183-186 |
Journal / Publication | Vacuum |
Volume | 52 |
Issue number | 1-2 |
Publication status | Published - 1999 |
Externally published | Yes |
Link(s)
Abstract
SiC nanometric powder has been obtained in square-wave modulated radiofrequency glow discharges from CH4 and SiH4 gas mixtures. Chemical and structural characterization revealed that the as-deposited SiC:H powder underwent spontaneous oxidation when exposed to atmosphere. To stabilise the powder chemically, we carried out a thermal treatment under vacuum (10 4 Pa) consisting of heating to 800°C (20°C/min). The effects on the structure of the powder were examined by FTIR, EA, XPS and from optical transmittance measurements. They can be summarized as follows: dehydrogenation of the powder that induces the formation of a SiC carbidic network and chemical stability under atmospheric conditions, further confirmed by exposure to air for more than 6 months. In addition, TEM images showed that the annealed powder presented a short-range order in β-SiC units, but there was no evidence of size changes due to sinterization or compactaction phenomena. © 1998 Elsevier Science Ltd. All rights reserved.
Citation Format(s)
Nanometric powder of stoichiometric silicon carbide produced in square-wave modulated RF glow discharges. / Viera, G.; Sharma, S. N.; Andújar, J. L. et al.
In: Vacuum, Vol. 52, No. 1-2, 1999, p. 183-186.Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review