Nanometric powder of stoichiometric silicon carbide produced in square-wave modulated RF glow discharges

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • G. Viera
  • S. N. Sharma
  • J. L. Andújar
  • J. Costa
  • E. Bertran

Detail(s)

Original languageEnglish
Pages (from-to)183-186
Journal / PublicationVacuum
Volume52
Issue number1-2
Publication statusPublished - 1999
Externally publishedYes

Abstract

SiC nanometric powder has been obtained in square-wave modulated radiofrequency glow discharges from CH4 and SiH4 gas mixtures. Chemical and structural characterization revealed that the as-deposited SiC:H powder underwent spontaneous oxidation when exposed to atmosphere. To stabilise the powder chemically, we carried out a thermal treatment under vacuum (10 4 Pa) consisting of heating to 800°C (20°C/min). The effects on the structure of the powder were examined by FTIR, EA, XPS and from optical transmittance measurements. They can be summarized as follows: dehydrogenation of the powder that induces the formation of a SiC carbidic network and chemical stability under atmospheric conditions, further confirmed by exposure to air for more than 6 months. In addition, TEM images showed that the annealed powder presented a short-range order in β-SiC units, but there was no evidence of size changes due to sinterization or compactaction phenomena. © 1998 Elsevier Science Ltd. All rights reserved.

Citation Format(s)

Nanometric powder of stoichiometric silicon carbide produced in square-wave modulated RF glow discharges. / Viera, G.; Sharma, S. N.; Andújar, J. L.; Zhang, R. Q.; Costa, J.; Bertran, E.

In: Vacuum, Vol. 52, No. 1-2, 1999, p. 183-186.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review