Nanometer-scale columns in GaAs fabricated by angled chlorine ion-beam-assisted etching

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

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Author(s)

  • W. D. Goodhue
  • S. W. Pang
  • G. D. Johnson
  • D. K. Astolfi
  • D. J. Ehrlich

Detail(s)

Original languageEnglish
Pages (from-to)1726-1728
Journal / PublicationApplied Physics Letters
Volume51
Issue number21
Publication statusPublished - 1987
Externally publishedYes

Abstract

Angled chlorine ion-beam-assisted etching has been used in combination with masked ion beam lithography to produce columns in GaAs with widths of less than 10 nm and height-to-width ratios greater than 25. This technique allows the highly controllable fabrication of structures with dimensions smaller than initially defined by the lithography. It can be applied to the fabrication of ultrasmall GaAs/AlGaAs quantum well structures having quantized energy states in two or three dimensions while at the same time being compatible with full-wafer processing.

Citation Format(s)

Nanometer-scale columns in GaAs fabricated by angled chlorine ion-beam-assisted etching. / Goodhue, W. D.; Pang, S. W.; Johnson, G. D.; Astolfi, D. K.; Ehrlich, D. J.

In: Applied Physics Letters, Vol. 51, No. 21, 1987, p. 1726-1728.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal