Abstract
The nano patterns of phase-change material Ge2Sb2Te5 are fabricated by the femto-second laser-induced forward transfer method. The size and the phase state of the Ge2Sb2Te5 patterns can be effectively controlled by varying the applied laser fluence and film thickness. Also, the multilevel electronic states of fabricated patterns are observed through the conductive-atomic force microscopy. This research has great potential in the area of the optical and the electrical data storage. © 2011 OSA.
| Original language | English |
|---|---|
| Title of host publication | Joint International Symposium on Optical Memory and Optical Data Storage, ISOM_ODS 2011 |
| Publisher | Optical Society of American (OSA) |
| ISBN (Print) | 9781557529152 |
| Publication status | Published - 2011 |
| Externally published | Yes |
| Event | Joint International Symposium on Optical Memory and Optical Data Storage, ISOM_ODS 2011 - Kauai, HI, United States Duration: 17 Jul 2011 → 20 Jul 2011 |
Publication series
| Name | Optics InfoBase Conference Papers |
|---|---|
| ISSN (Electronic) | 2162-2701 |
Conference
| Conference | Joint International Symposium on Optical Memory and Optical Data Storage, ISOM_ODS 2011 |
|---|---|
| Place | United States |
| City | Kauai, HI |
| Period | 17/07/11 → 20/07/11 |
Bibliographical note
Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
-
SDG 9 Industry, Innovation, and Infrastructure
Fingerprint
Dive into the research topics of 'Nanofabrication for multi states of Ge2Sb2Te5 by femto-seond laser induced forward transfer'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver