Nanocrystalline tetragonal tantalum thin films

M. Zhang; Y. F. Zhang; P. D. Rack; M. K. Miller; T. G. Nieh

doi:10.1016/j.scriptamat.2007.07.041

Nanocrystalline tetragonal tantalum thin films

M. Zhang
, Y. F. Zhang
, P. D. Rack
, M. K. Miller
, T. G. Nieh^*

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

58 Citations (Scopus)

Abstract

Nanocrystalline tetragonal tantalum thin film was prepared by magnetron sputtering. Structure, electrical and mechanical properties of the film were characterized using X-ray diffraction, transmission electron microscopy, four-point probe and nanoindentation. Electrical resistivity of the film was found to be 264.55 μΩ cm at room temperature with negative temperature dependence. Hardness and Young's modulus of the present tetragonal tantalum thin film with a grain size of 32.3 nm were measured to be 15.0 and 193.9 GPa, respectively. © 2007 Acta Materialia Inc.

Original language	English
Pages (from-to)	1032-1035
Journal	Scripta Materialia
Volume	57
Issue number	11
DOIs	https://doi.org/10.1016/j.scriptamat.2007.07.041
Publication status	Published - Dec 2007
Externally published	Yes

Bibliographical note

Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

Research Keywords

Electrical resistivity/conductivity
Nanocrystalline materials
Nanoindentation
Refractory metals
Thin films

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10.1016/j.scriptamat.2007.07.041

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title = "Nanocrystalline tetragonal tantalum thin films",

abstract = "Nanocrystalline tetragonal tantalum thin film was prepared by magnetron sputtering. Structure, electrical and mechanical properties of the film were characterized using X-ray diffraction, transmission electron microscopy, four-point probe and nanoindentation. Electrical resistivity of the film was found to be 264.55 μΩ cm at room temperature with negative temperature dependence. Hardness and Young's modulus of the present tetragonal tantalum thin film with a grain size of 32.3 nm were measured to be 15.0 and 193.9 GPa, respectively. {\textcopyright} 2007 Acta Materialia Inc.",

keywords = "Electrical resistivity/conductivity, Nanocrystalline materials, Nanoindentation, Refractory metals, Thin films",

author = "M. Zhang and Zhang, \{Y. F.\} and Rack, \{P. D.\} and Miller, \{M. K.\} and Nieh, \{T. G.\}",

note = "Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].",

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doi = "10.1016/j.scriptamat.2007.07.041",

language = "English",

volume = "57",

pages = "1032--1035",

journal = "Scripta Materialia",

issn = "1359-6462",

publisher = "Acta Materialia Inc",

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TY - JOUR

T1 - Nanocrystalline tetragonal tantalum thin films

AU - Zhang, M.

AU - Zhang, Y. F.

AU - Rack, P. D.

AU - Miller, M. K.

AU - Nieh, T. G.

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 2007/12

Y1 - 2007/12

N2 - Nanocrystalline tetragonal tantalum thin film was prepared by magnetron sputtering. Structure, electrical and mechanical properties of the film were characterized using X-ray diffraction, transmission electron microscopy, four-point probe and nanoindentation. Electrical resistivity of the film was found to be 264.55 μΩ cm at room temperature with negative temperature dependence. Hardness and Young's modulus of the present tetragonal tantalum thin film with a grain size of 32.3 nm were measured to be 15.0 and 193.9 GPa, respectively. © 2007 Acta Materialia Inc.

AB - Nanocrystalline tetragonal tantalum thin film was prepared by magnetron sputtering. Structure, electrical and mechanical properties of the film were characterized using X-ray diffraction, transmission electron microscopy, four-point probe and nanoindentation. Electrical resistivity of the film was found to be 264.55 μΩ cm at room temperature with negative temperature dependence. Hardness and Young's modulus of the present tetragonal tantalum thin film with a grain size of 32.3 nm were measured to be 15.0 and 193.9 GPa, respectively. © 2007 Acta Materialia Inc.

KW - Electrical resistivity/conductivity

KW - Nanocrystalline materials

KW - Nanoindentation

KW - Refractory metals

KW - Thin films

UR - https://www.scopus.com/pages/publications/34548507244

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-34548507244&origin=recordpage

U2 - 10.1016/j.scriptamat.2007.07.041

DO - 10.1016/j.scriptamat.2007.07.041

M3 - RGC 21 - Publication in refereed journal

SN - 1359-6462

VL - 57

SP - 1032

EP - 1035

JO - Scripta Materialia

JF - Scripta Materialia

IS - 11

ER -

Nanocrystalline tetragonal tantalum thin films

Abstract

Bibliographical note

Research Keywords

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