Nano-CMOS technology for next fifteen years

Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)peer-review

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Author(s)

Detail(s)

Original languageEnglish
Title of host publicationIEEE Region 10 Annual International Conference, Proceedings/TENCON
Publication statusPublished - 2007
Externally publishedYes

Conference

Title2006 IEEE Region 10 Conference (TENCON 2006)
PlaceChina
CityHong Kong
Period14 - 17 November 2006

Abstract

Complementary Metal-Oxide-Semiconductor (CMOS) technology has been developed into the sub-100 nm range. It is expected that the nano-CMOS technology will govern the IC manufacturing for at least another couple of decades. Though there are many challenges ahead, further down-sizing the device to a few nanometers is still on the schedule of International Technology Roadmap for Semiconductors (ITRS). Several technological options for manufacturing nano-CMOS microchips are available or will soon be available. This paper reviews the challenges of nano-CMOS downsizing and manufacturing. We shall focus on the recent progresses on the key technologies for the nano-CMOS IC fabrication in the next fifteen years. © 2006 IEEE.

Citation Format(s)

Nano-CMOS technology for next fifteen years. / Iwai, Hiroshi; Wong, Hei.

IEEE Region 10 Annual International Conference, Proceedings/TENCON. 2007. 4142660.

Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)peer-review