TY - GEN
T1 - Nano silicide formation in nano si wires
AU - Tu, K. N.
AU - Lu, Kuo-Chang
AU - Chou, Yi-Chia
PY - 2008
Y1 - 2008
N2 - Recently, Prof. Charles Lieber (Dept. of Chemistry, Harvard University) and his co-workers have published a short review articles on “Nanowire-based nanoelectronic device in the life sciences” which appeared on p.142 in MRS Bulletin, February issue, 2007 [1]. The review reports that the conductance of nanowire of Si is very sensitive to small changes in its surrounding potential and can be affected by the attachment of a small number of charged biological molecules. Using different receptors on the oxidized nano Si wire surface, the detection of the conductance change can be specific to the molecules absorbed on the wire surface. The combination of sensitivity and selectivity makes nanowire-based electronic device to be unique in having a great potential in bio-sensing. It is further reported that in order to have ultra-sensitivity for the detection of a single charged molecule or a virus, the length of the nanowire of Si has to be in the nm range or it requires a nanogap of Si. © 2008 IEEE
AB - Recently, Prof. Charles Lieber (Dept. of Chemistry, Harvard University) and his co-workers have published a short review articles on “Nanowire-based nanoelectronic device in the life sciences” which appeared on p.142 in MRS Bulletin, February issue, 2007 [1]. The review reports that the conductance of nanowire of Si is very sensitive to small changes in its surrounding potential and can be affected by the attachment of a small number of charged biological molecules. Using different receptors on the oxidized nano Si wire surface, the detection of the conductance change can be specific to the molecules absorbed on the wire surface. The combination of sensitivity and selectivity makes nanowire-based electronic device to be unique in having a great potential in bio-sensing. It is further reported that in order to have ultra-sensitivity for the detection of a single charged molecule or a virus, the length of the nanowire of Si has to be in the nm range or it requires a nanogap of Si. © 2008 IEEE
UR - https://www.scopus.com/pages/publications/60649103645
UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-60649103645&origin=recordpage
U2 - 10.1109/ICSICT.2008.4734604
DO - 10.1109/ICSICT.2008.4734604
M3 - RGC 32 - Refereed conference paper (with host publication)
SN - 9781424421855
T3 - International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT
SP - 579
EP - 581
BT - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology
PB - IEEE
T2 - 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT 2008)
Y2 - 20 October 2008 through 23 October 2008
ER -