N -type behavior of ferroelectric-gate carbon nanotube network transistor

Jun Wei Cheah; Yumeng Shi; Hock Guan Ong; Chun Wei Lee; Lain-Jong Li; Junling Wang

doi:10.1063/1.2975158

N -type behavior of ferroelectric-gate carbon nanotube network transistor

Jun Wei Cheah
, Yumeng Shi
, Hock Guan Ong
, Chun Wei Lee
, Lain-Jong Li
, Junling Wang

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

12 Citations (Scopus)

Abstract

Carbon nanotube field effect transistor has attracted much attention recently and is a promising candidate for next generation nanoelectronics. Here, we report our study on a transistor using single wall carbon nanotube network as the channel and a ferroelectric film as the gate dielectric. The spontaneous polarization of ferroelectric materials offers nonvolatility and controllability of the surface charges. Modulation of > 102 in the channel conductivity has been observed in the network-based transistor. Voltage pulses are used to control the transistor states; no continuous gate bias is needed. Furthermore, n -type behavior of the network channel is observed, which is attributed to a change in the Schottky barrier at the carbon nanotube-metal interface. © 2008 American Institute of Physics.

Original language	English
Article number	082103
Journal	Applied Physics Letters
Volume	93
Issue number	8
DOIs	https://doi.org/10.1063/1.2975158
Publication status	Published - 2008
Externally published	Yes

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Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

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@article{4ab237abad7c4ad29c709ba925a9bc6e,

title = "N -type behavior of ferroelectric-gate carbon nanotube network transistor",

abstract = "Carbon nanotube field effect transistor has attracted much attention recently and is a promising candidate for next generation nanoelectronics. Here, we report our study on a transistor using single wall carbon nanotube network as the channel and a ferroelectric film as the gate dielectric. The spontaneous polarization of ferroelectric materials offers nonvolatility and controllability of the surface charges. Modulation of > 102 in the channel conductivity has been observed in the network-based transistor. Voltage pulses are used to control the transistor states; no continuous gate bias is needed. Furthermore, n -type behavior of the network channel is observed, which is attributed to a change in the Schottky barrier at the carbon nanotube-metal interface. {\textcopyright} 2008 American Institute of Physics.",

author = "Cheah, \{Jun Wei\} and Yumeng Shi and Ong, \{Hock Guan\} and Lee, \{Chun Wei\} and Lain-Jong Li and Junling Wang",

note = "Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].",

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doi = "10.1063/1.2975158",

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journal = "Applied Physics Letters",

issn = "0003-6951",

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TY - JOUR

T1 - N -type behavior of ferroelectric-gate carbon nanotube network transistor

AU - Cheah, Jun Wei

AU - Shi, Yumeng

AU - Ong, Hock Guan

AU - Lee, Chun Wei

AU - Li, Lain-Jong

AU - Wang, Junling

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 2008

Y1 - 2008

N2 - Carbon nanotube field effect transistor has attracted much attention recently and is a promising candidate for next generation nanoelectronics. Here, we report our study on a transistor using single wall carbon nanotube network as the channel and a ferroelectric film as the gate dielectric. The spontaneous polarization of ferroelectric materials offers nonvolatility and controllability of the surface charges. Modulation of > 102 in the channel conductivity has been observed in the network-based transistor. Voltage pulses are used to control the transistor states; no continuous gate bias is needed. Furthermore, n -type behavior of the network channel is observed, which is attributed to a change in the Schottky barrier at the carbon nanotube-metal interface. © 2008 American Institute of Physics.

AB - Carbon nanotube field effect transistor has attracted much attention recently and is a promising candidate for next generation nanoelectronics. Here, we report our study on a transistor using single wall carbon nanotube network as the channel and a ferroelectric film as the gate dielectric. The spontaneous polarization of ferroelectric materials offers nonvolatility and controllability of the surface charges. Modulation of > 102 in the channel conductivity has been observed in the network-based transistor. Voltage pulses are used to control the transistor states; no continuous gate bias is needed. Furthermore, n -type behavior of the network channel is observed, which is attributed to a change in the Schottky barrier at the carbon nanotube-metal interface. © 2008 American Institute of Physics.

UR - https://www.scopus.com/pages/publications/51349139859

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-51349139859&origin=recordpage

U2 - 10.1063/1.2975158

DO - 10.1063/1.2975158

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 082103

ER -

N -type behavior of ferroelectric-gate carbon nanotube network transistor

Abstract

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